Other

Trw Limited

Oyla, Inc.

Srinath Kalluri

Timothy A Vang

David C Scott

Ralph Spickermann

Michael G Wickham

Raghavendra Singh

Doyle T Nichols

Michael P Nesnidal

Robert W Lodenkamper

Siddharth Jain

A device and method of object detection in a scene by combining traditional 2D visual light imaging such as pixels with 3D data such as a voxel map are described. A single lens directs image light from the scene to a dichroic mirror which then provides light to a both a 2D visible light image sensor and a 3D sensor, such as a time-of-flight sensor that uses a transmitted, modulated IR light beam, which is then synchronously demodulated to determine time of flight as well as 2D coordinates. 2D portions (non-distance) of 3D voxel image data are aligned with the 2D pixel image data such that each is responsive to the same portion of the scene. Embodiments determine true reflectivity, true scale, and image occlusion. 2D images may be enhanced by the 3D true reflectivity. Combined data may be used as training data for object detection and recognition.

Device and method of object detection

An optical device creates 3D images comprising a field of points, each point comprising horizontal, vertical, and distance metrics. The device comprises an illumination subsystem, comprising light sources, such as LEDs, a non-resonant beam steering element such as a micro-electro-mechanical system (MEMs) mirror, beam-shaping optics, a beam director plate, and a diffuser. The device also comprises an imaging subsystem with one or more optical detector chips that measure time-of-flight (TOF). Devices may dynamically and sequentially images solid-angle sub-regions of interest, in an arbitrary order, out of a total FOV, using eye-safe illumination. The corresponding received image portions are stitched together. The beam steering element is non-resonant, allowing arbitrary and rapid changes to its pointing vector. Beam shaping optics generates rectangular solid-angle illumination. One detector chip integrates light from one sub-region while another chip is reads out image data.

Device and method of optical range imaging

A three terminal edge illuminated epilayer waveguide phototransistor including a subcollector layer formed of an epitaxially grown quaternary semiconductor material, such as heavily doped InGaAsP. A collector region of undoped InGaAs is epitaxially grown on the subcollector layer. A base region, including a heavily doped InGaAs base layer and a very thin undoped InGaAs spacer layer, is epitaxially grown on the collector layer. An emitter region, including a doped InGaAsP layer, a doped InP layer, and a heavily doped InGaAs emitter contact layer, is epitaxially grown on the base layer. The various layers and regions are formed so as to define an edge-illuminated facet for receiving incident light.

Three terminal edge illuminated epilayer waveguide phototransistor

Mach-Zehnder modulator with index tuned multimode interference couplers comprising a substrate, an optical input waveguide on the substrate for receiving a light signal, and an input multimode interference coupler. The input multimode interference coupler splits the received light and propagates it down two separate waveguides. Also, the input multimode interference coupler contains electrodes that allow the index of refraction to be tuned. These waveguides contain phase shift regions so that the light signals can be combined at the output multimode interference coupler out of phase. This allows the modulation of the light signal. Also, the output multimode interference coupler contains electrodes that allow the index of refraction to be tuned. The modulated light signal is then outputted through an output waveguide. The tuning of the index of refraction for the input and output multimode interference couplers eliminates the sensitivity of the areas to variations in their geometry.

Mach-Zehnder modulator with individually optimized couplers for optical splitting at the input and optical combining at the output

A monolithically integrated heterojunction bipolar transistor optoelectronic transimpedance amplifier using the first transistor as an optical detector. An edge illuminated epilayer waveguide phototransistor is used as the light-detecting element. The phototransistor is used as an optical detector in which the incident light pulses are converted to electrical pulses and then amplified for further signal processing. The phototransistor is monolithically integrated on the same material substrate as the emitter follower amplifier so that the parasitics normally associated with receiver circuitry are minimized. By eliminating the parasitic impedances, the circuit can be used as a receiver in high bit rate optical communication systems.

Heterojunction bipolar transistor optoelectronic transimpedance amplifier using the first transistor as an optical detector

An edge illuminated epilayer waveguide phototransistor including a subcollector layer formed from an epitaxially grown quaternary semiconductor material, such as heavily doped InGaAsP. A collector region of undoped InGaAs is epitaxially grown on the subcollector layer. A base region of moderately doped InGaAs is epitaxially grown on the collector layer. An emitter region, including a doped InGaAsP layer, a doped InP layer, and a heavily doped InGaAs emitter contact layer, is epitaxially grown on the base layer. The various layers and regions are formed so as to define an edge-illuminated facet for receiving incident light. Also, the base does not have an ohmic contact so that the base thickness can be minimized. Finally, the base doping concentration is minimized so that the gain-bandwidth product can be maximized.

Two terminal edge illuminated epilayer waveguide phototransistor

A waveguide ( ) is provided having a two-dimensional optical wavelength Bragg grating ( ) embedded within a semiconductor laser medium ( ). More particularly, the waveguide ( ) includes an active region ( ) sandwiched between n-doped and p-doped cladding layers ( ). The two-dimensional Bragg grating ( ) is formed in the active region ( ). Upper and lower electrodes ( ) are defined on opposite sides of the cladding layers ( ) to complete the waveguide structure ( ). The two-dimensional grating ( ) provides simultaneous frequency selective feedback for mode control in both the longitudinal and lateral directions.

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Aliso Viejo, CA, United States of America

Srinath Kalluri