Globalfoundries Inc.

Marvell International Limited

Sreenivasula Reddy Dhani Reddy

Venkatraghavan Bringivijayaraghavan

Sreejith Chidambaran

Arjun Sankar

Binu Jose

George Maria Braceras

Krishnan Santhana Rengarajan

Sushma Nirmala Sambatur

Vinay Bhat Soori

Md Nadeem Iqbal

Disclosed is a multi-port memory array configured to minimize resistance-capacitance (RC) delay caused by wordline coupling. In each row of the array, a first voltage boost circuit is connected to the distal ends of a first wordline and a second wordline and boosts a first voltage on the first wordline during an access period when the first voltage is transitioning from low to high and when, concurrently, a second voltage on the second wordline is either low or transitioning to low. Optionally, a second voltage boost circuit is also connected to the distal ends of the first and second wordlines and boosts the second voltage on the second wordline during a different access period when the second voltage is transitioning from low to high and when, concurrently, the first voltage on the first wordline is either at low or transitioning from high to low. Also disclosed is a corresponding method.

Multi-port memory arrays with integrated worldwide coupling mitigation structures and method

A circuit includes a core having a memory array. The memory array includes memory cells and bitlines, and is arranged in columns. The core includes a metallization layer having connections to the memory array, which is devoid of memory cells. Digit lines are connected to the bitlines of a column of the memory array. A write driver is connected to the digit lines. A write assist circuit is connected to the write driver. The write assist circuit maintains a voltage on the digit lines prior to write operations and provides a boost voltage to the digit lines during write operations. A wire bridge located in the metallization layer of the core connects the write assist circuit to the write driver.

Write assist

Devices include an array of memory cells arranged in rows and columns. Wordlines are connected to the memory cells, and each of the wordlines is connected to a distinct row of the array of the memory cells. A wordline driver circuit is connected to a near end of the wordlines. The wordline driver circuit outputs a wordline select signal. Also, a feedback circuit is connected to a far end of each of the wordlines, opposite the near end of the wordlines. The feedback circuit includes first transistors (gated by the internal clock signal and the wordline select signal) electrically connecting a relatively lower voltage source to the far end of the wordlines; and second transistors (also gated by the internal clock signal and the wordline select signal) electrically connecting a relatively higher voltage source to the far end of the wordlines.

Feedback circuit at word line ends

Approaches for stability of cells in a Static Random Access Memory (SRAM) array are provided. A circuit includes a precharging circuit configured to precharge bitlines of a Static Random Access Memory (SRAM) array to a first voltage potential for a non-read operation and to a second voltage potential for a read operation. The first voltage potential is different than the second voltage potential.

Circuit to improve SRAM stability

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Bengaluru, India

Sreenivasula Reddy Dhani Reddy