Xilinx, Inc.

Sree Rkc Saraswatula

Santosh Yachareni

Shidong Zhou

Narendra Kumar Pulipati

Jing Jing Chen

Brian C Gaide

James D Wesselkamper

Sundeep Ram Gopal Agarwal

Anil Kumar Kandala

Sandeep Vundavalli

Michael Tsivyan

Teja Masina

Vishwak R Manda

Some examples described herein relate to multi-chip devices. In an example, a multi-chip device includes first and second chips. The first chip includes a power supply circuit and a logic circuit. The first and second chips are coupled together. The second chip is configured to receive power from the power supply circuit. The second chip includes a programmable circuit, a pull-up circuit, and a detector circuit. The detector circuit is configured to detect a presence of a power voltage on the second chip and responsively output a presence signal. The power voltage on the second chip is based on the power from the power supply circuit. The logic circuit is configured to generate a pull-up signal based on the presence signal. The pull-up circuit is configured to receive the pull-up signal and configured to pull up a voltage of a node of the programmable circuit responsive to the pull-up signal.

Multi-chip devices

Examples described herein provide a method for disabling a defective portion of a fabric die of a stacked IC device. The method includes receiving a signal indicating that a portion of a fabric die of a stacked IC device including at least two fabric dies is defective. The method further includes, in response to the signal, pulling a source voltage rail of the defective portion to ground, thereby disabling the portion, and operating the remainder of the fabric die without interference from or contention with the disabled portion. In one example, the stacked IC device is an active on active (AoA) device, and the portion of the fabric die includes a configuration memory cell. In one example, the signal is received after power-up of the stacked IC device.

Yield-centric power gated regulated supply design with programmable leakers

Apparatus and associated methods relate to a glitch detection circuit monitoring a duration that a selected fractional supply voltage is below a predetermined voltage threshold. The selected fractional supply voltage may be at the predetermined threshold when the supply voltage is between a valid circuit-supply voltage and a power-on circuit-reset (POR). A glitch detect signal may be generated, for example, when the monitored duration is greater than a predetermined duration threshold. A test glitch generator may generate a test glitch, for example, having selectable voltage and duration, which may be selectably applied to the glitch detection circuit to verify operation. Various exemplary glitch detection circuits may advantageously determine externally produced tampering attempts by detecting circuit-supply voltages and durations that meet specific selectable supply voltage and duration criteria, improving security of sensitive field programmable gate array (FPGA) data by taking protective action in response to the detection.

Glitch detector and test glitch generator

An example read address generation circuit for a static random access memory (SRAM) cell includes an operational amplifier having a non-inverting input coupled to a reference voltage, a memory emulation circuit having an output coupled to an inverting input of the operational amplifier and a control input coupled to an output of the operational amplifier, and a multiplexer having a first input coupled to receive a constant read voltage, a second input coupled to the output of the operational amplifier, and an output coupled to supply a read address voltage to the SRAM cell.

Adaptive read scheme for configuration SRAMs in a programmable device

A circuit for accessing memory elements in an integrated circuit device is described. The circuit comprises a first plurality of memory elements; first line drivers, each of the first line drivers configured to provide a signal to a memory element of the first plurality of memory elements; first line driver buffers configured to control the signals provided by the first line drivers to the first plurality of memory elements; a second plurality of memory elements; second line drivers, each of the second line drivers configured to provide a signal to a memory element of the second plurality of memory elements; second line driver buffers configured to control the signals provided by the second line drivers to the second plurality of memory elements; and wherein one or both of the first line driver buffers and the second line driver buffers are configured to be selectively disabled.

Growing community of inventors

Hyderabad Telangana, India

Sree Rkc Saraswatula