Qimonda Ag

Infineon Technologies Ag

Srdjan Djordjevic

Wolfgang Hoppe

Hermann Ruckerbauer

Georg Braun

Andreas Jakobs

Karl-Heinz Moosrainer

Michael Bestele

A memory module includes a plurality of memory devices and a stacked error correction code memory device. The plurality of memory devices includes one or more memory chips arranged in a plurality of ranks. The stacked error correction code memory device includes a plurality of error correction code memory chips. The number of error correction code memory chips is at least one more than the number of the one or more memory chips. Each of the error correction code memory chips are arranged together with the memory chips of one of the ranks.

Memory module with ranks of memory chips

A memory module having a board and a plurality of memory elements on the board which belong to different memory ranks, each memory rank being addressable via a respective selection signal. The memory module additionally includes a memory buffer having a memory rank interface coupled to the memory elements of each memory rank, and a selection signal output for the selection signal of each memory rank, the memory elements being arranged in rows on the board and the memory elements of a memory rank extending only over half of the rows.

Memory module having buffer and memory ranks addressable by respective selection signal

A semiconductor memory arrangement includes a substrate, a first control device disposed on the substrate and adapted to receive command and address signals, a second control device, and a plurality of memory units. The second control device is adapted to receive the command and address signals from the first control device and to transmit the command and address signals to the memory units of the plurality of memory units.

Semiconductor memory arrangement

A semiconductor memory module comprises a control chip for driving ECC memory chips and further memory chips. The memory chips are arranged in two rows on a top side and a bottom side of the module circuit board. The ECC memory chips are arranged centrally on the module circuit board alongside the rows of the memory chips. A control bus connects the ECC memory chips and also the memory chips to the control chip. In a region remote from the control chip, the control bus branches in a contact-making hole into a first partial bus, to which a first group of memory chips are connected, and a second partial bus, to which a second group of memory chips are connected. The ECC memory chips are likewise connected to the control bus via the contact-making hole. Since the ECC memory chips are not arranged directly under the control chip, a bus branch directed backward is not required. As a result, space considerations on the module circuit board are eased and signal integrity on the control buses is improved.

Semiconductor memory module with error correction

A buffer component for a memory module having a plurality of memory components includes item of access information in accordance with a data transmission protocol, the address, clock, control and command signals depending on the access information, a second data interface for driving a clock signal and address and command signals to the plurality of memory components and for driving a control signal to a group of the plurality of memory components in accordance with a signaling protocol, wherein an activation of the memory components and an acceptance of the address and command signals are effected in a manner dependent on the control signals, and a control unit which applies the address and command signals to the plurality of memory components during a first clock period of the clock signal and applies the control signal for activating the group of the plurality of memory components to the group of the plurality of memory components to be activated when address and command signals are present, in a succeeding second clock period of the clock signal, whereby the address and command signals present are accepted into the group of the plurality of memory components.

Buffer component for a memory module, and a memory module and a memory system having such buffer component

A system comprises a board, memory units that are arranged on the board, a control unit configured to control memory access to the memory units, at least one control/address bus configured to transmit control/address signals from the control unit to a first group of the memory units, and at least one clock bus configured to transmit a clock signal from the control unit to a second group of the semiconductor memory units. A length of the at least one control/address bus corresponds to the length of the at least one clock bus. The second group of memory units comprises fewer memory units than the first group of memory units.

Memory apparatus with a bus architecture

A circuit board includes a first group of layers located close to a top side of the circuit board, and a second group of layers located close to an underside of the circuit board. Signals which are fed to input and output contact terminals on the top side of the circuit board are passed along at least one of the layers of the group. Signals which are fed to input and output contact terminals on the underside of the circuit board are passed along at least one of the layers of the second group. The contact-making holes for connecting the input and output contact terminals to the layers of the first and second groups are preferably formed as blind contact-making holes.

Circuit board for reducing crosstalk of signals

A semiconductor memory module, which is formed as an FBDIMM memory module, for example, has a planar design. In the 2R&#xd7;4 configuration, semiconductor components are arranged in two rows on a top side of a module board and semiconductor memory components are likewise arranged in two rows on an underside of the module board. In contrast to a 'Stacked DRAM' design, the semiconductor components in accordance with the planar design contain only one memory chip. By using a parallel routing for a command address bus and an on-die termination bus, the address, clock, and control buses can be adapted in terms of load, so that different signal propagation times on the different buses are avoided to the greatest possible extent.

Semiconductor memory module with bus architecture

A semiconductor memory module includes a wiring board in or on which at least a number of data line runs are conducted in a respective width of k bits and which exhibits a number of memory ranks which in each case have n memory chips, and at least one signal driver/control chip (hub), a k-bit-wide data line run in each case connecting a memory chip from each memory rank to the signal driver/control chip (hub) and four or eight memory ranks in each case being arranged distributed on the top and bottom of the wiring board along the associated data line run in such a manner that, in operation, the load is distributed along the respective data line run.

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Munich, Germany

Srdjan Djordjevic