Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

California Institute of Technology

Sozo Yokogawa

Isao Hirota

Fumihiko Koga

Itaru Oshiyama

Hayato Wakabayashi

Yoshiki Ebiko

Nobuhiro Kawai

Yuhi Yorikado

Suzunori Endo

Nobuo Nakamura

Harumi Tanaka

Mikinori Ito

Hirotaka Murakami

Harry A Atwater

Frederick T Brady

Ward Van Der Tempel

Yusuke Moriyama

Sungin Hwang

Taisuke Suwa

Stanley Burgos

Timmermans Michiel

A light receiving element including: a semiconductor substrate; a photoelectric conversion unit (PD) in the semiconductor substrate that converts light into electric charges; a first electric charge accumulation unit (MEM) in the semiconductor substrate to which the electric charges are transferred from the photoelectric conversion unit; a first distribution gate on a front surface of the semiconductor substrate that distributes the electric charges from the photoelectric conversion unit to the first electric charge accumulation unit; a second electric charge accumulation unit (MEM) in the semiconductor substrate to which the electric charges are transferred from the photoelectric conversion unit; and a second distribution gate on the front surface of the semiconductor substrate that distributes the electric charges from the photoelectric conversion unit to the second electric charge accumulation unit, in which the first and second distribution gates each have a pair of buried gate portions.

Light receiving element and light receiving device

To provide a light receiving element including: a photoelectric conversion unit (PD) that is provided in a semiconductor substrate and converts light into a charge; a first charge accumulation unit (MEM) to which the charge is transferred from the photoelectric conversion unit; a second charge accumulation unit (MEM) to which the charge is transferred from the photoelectric conversion unit, in which each of the first and second charge accumulation units includes a stack of an electrode, a first insulating layer, and a semiconductor layer.

Light receiving element and light receiving apparatus

The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.

Solid-state image pickup device and electronic apparatus

A distance measurement accuracy is improved. A solid-state imaging device according to an embodiment includes a pixel array part in which a plurality of pixels is arranged in a matrix, in which each of the pixels includes a plurality of photoelectric conversion units that each photoelectrically converts incident light to generate a charge, a floating diffusion region that accumulates the charge, a plurality of transfer circuits that transfer the charge generated in each of the plurality of photoelectric conversion units to the floating diffusion region, and a first transistor that causes a pixel signal of a voltage value corresponding to a charge amount of the charge accumulated in the floating diffusion region to appear in a signal line.

Solid-state imaging device and distance measurement device

In a light receiving device, a light receiving element includes a first photoelectric conversion unit (PD) that converts light into electric charges, a first electric charge storage unit (MEM) to which the electric charges are transferred from the first photoelectric conversion unit, a first distribution gate, a second electric charge storage unit (MEM) to which the electric charges are transferred from the first photoelectric conversion unit, and a second distribution gate, in which the first and second distribution gates are provided at positions axially symmetric to each other with respect to a first center axis extending so as to pass through the center of the first photoelectric conversion unit, in a direction intersecting the column direction at a predetermined angle, when viewed from above the semiconductor substrate.

Light receiving device

The present disclosure relates to a solid state imaging element and an electronic device that make it possible to improve sensitivity to light on a long wavelength side. A solid state imaging element according to a first aspect of the present disclosure has a solid state imaging element in which a large number of pixels are arranged vertically and horizontally, the solid state imaging element includes a periodic concave-convex pattern on a light receiving surface and an opposite surface to the light receiving surface of a light absorbing layer as a light detecting element. The present disclosure can be applied to, for example, a CMOS and the like installed in a sensor that needs a high sensitivity to light belonging to a region on the long wavelength side, such as light in the infrared region.

Solid state imaging element and electronic device

An imaging device includes a first photoelectric conversion region () receiving light within a first range of wavelengths, a second photoelectric conversion region () receiving light within a second range of wavelengths, and a third photoelectric conversion region () receiving light within a third range of wavelengths. At least a portion of a light-receiving surface of the first photoelectric conversion region has a first concave-convex structure (), and a light-receiving surface of the second photoelectric conversion region has a different structure () than the first concave-convex structure.

Solid-state imaging device and electronic apparatus

An imaging device includes a photodetector and an optical filter disposed on a light-receiving surface of the photodetector. The optical filter may include a diffraction grating, a core layer, and a reflector disposed on first and second opposing sides of the core layer. In some cases, the optical filter (e.g., a GMR filter) uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane. The reflector may reflect electromagnetic waves between adjacent optical filters. The present technology can be applied to, for example, an image sensor provided with a GMR filter, such as a back-side-illuminated or front-side-illuminated CMOS image sensor.

Optical filters and associated imaging devices

A light receiving element includes: a first tap; a second tap; a first photoelectric conversion unit configured to detect a charge generated by photoelectric conversion according to a light amount of incident light in accordance with a voltage applied to the first tap; a second photoelectric conversion unit configured to detect a charge generated by photoelectric conversion according to a light amount of the incident light in accordance with a voltage applied to the second tap; a plurality of accumulation units configured to accumulate the charges generated by the first photoelectric conversion unit and the second photoelectric conversion unit; a plurality of transmission units configured to transmit the charges generated by the first photoelectric conversion unit and the second photoelectric conversion unit to the plurality of accumulation units; and a calculation unit configured to execute calculation based on the charges accumulated in the plurality of accumulation units.

Light receiving element and ranging module

Provided is a solid-state image pickup element that includes a pixel, a light-receiving-surface-sided trench, and a light-receiving-surface-sided shielding member. A plurality of protrusions is formed on the light-receiving surface of the pixel in the solid-state image pickup element. In addition, the light-receiving-surface-sided trench is formed around the pixel having the plurality of protrusions formed, at the light-receiving surface in the solid-state image pickup element. In addition, the light-receiving-surface-sided member is buried in the light-receiving-surface-sided trench formed around the pixel having the plurality of protrusions formed on the light-receiving surface in the solid-state image pickup element. In addition, the photoelectric conversion region of a near-infrared-light pixel expands to the surface side opposed to the light-receiving surface of the photoelectric conversion region of a visible-light pixel. In addition, a trench is further formed inside the pixel at a surface opposed to the light-receiving surface.

Solid-state image pickup element, image pickup device, and method of manufacturing solid-state image pickup element

An imaging device includes a photodetector and an optical filter disposed on a light-receiving surface of the photodetector. The optical filter may include a diffraction grating, a core layer, and a reflector disposed on first and second opposing sides of the core layer. In some cases, the optical filter (e.g., a guided mode resonance ('GMR') filter) uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane. The reflector may reflect electromagnetic waves between adjacent optical filters. In some cases, the imaging device is a back-side-illuminated or front-side-illuminated CMOS or CCD image sensor.

Growing community of inventors

Kanagawa, Japan

Sozo Yokogawa