Lg Display Co., Ltd.

Soyoung Noh

Hyunsoo Shin

Wonkyung Kim

Kyeongju Moon

Taehwan Kim

Minjoo Kim

Yongil Kim

Seungryul Park

A thin film transistor substrate includes a first thin film transistor disposed having a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode and a first drain electrode; a first gate insulating layer between the polycrystalline semiconductor layer and the first gate electrode; a second thin film transistor disposed having an oxide semiconductor layer on the first gate electrode, a second gate electrode on the oxide semiconductor layer, a second source electrode and a second drain electrode; an intermediate insulating layer disposed on the first gate electrode and under the oxide semiconductor layer; and a second gate insulating layer on the intermediate insulating layer and under the first source electrode, the first drain electrode and the second gate electrode.

Thin film transistor substrate and display using the same

A disclosed liquid crystal display includes a substrate with a gate electrode, a gate insulation film, an active layer, a source electrode, a drain electrode, and a first passivation film formed on the substrate. An organic insulation film having a first contact hole and a common electrode having a second contact hole are formed on the first passivation film using a single mask. The display also includes a second passivation film on the common electrode, and a pixel electrode on the second passivation film and connected to the drain electrode via the contact hole through the second passivation film. The top surface of the organic insulation film adjacent to a side edge of the organic insulation film is uncovered by the common electrode.

Liquid crystal display device and method for manufacturing the same

Provided are a thin film transistor (TFT) substrate, a display device, and a method of forming the TFT. A TFT substrate includes: a first TFT including: a polycrystalline semiconductor (PS) layer, a first gate electrode (GE) overlapping the PS layer, a nitride layer (NL) on the first GE, an oxide layer (OL) on the NL, and a first source electrode and a first drain electrode on the OL, and a second TFT including: a second GE on a same layer as the first GE, a hydrogen collecting layer between the second GE and the NL, an oxide semiconductor (OS) layer on the OL, a second source electrode and a second drain electrode contacting respective sides of the OS layer, wherein the first TFT and the second TFT are disposed on a same substrate, and wherein the NL includes an opening exposing the hydrogen collecting layer of the second TFT.

Thin film transistor substrate, display device including a thin film transistor substrate, and method of forming a thin film transistor substrate

The present disclosure relates to a high light transmittance in-plane switching liquid crystal display device. The present disclosure suggests a horizontal electric field type liquid crystal display device comprising: a substrate; a plurality of gate lines disposed in horizontal direction on the substrate; a plurality of data lines disposed in vertical direction on the substrate; a plurality of pixel area defined by the crossing the plurality of the gate lines and the plurality of the data lines; a first pixel electrode having a plurality of segments arraying with a predetermined distance within the pixel area; a second pixel electrode having a plurality of segments arraying in parallel with the first pixel electrode within the pixel area; and a common electrode overlapping with the first pixel electrode and the second electrode within the pixel area.

Growing community of inventors

Gyeonggi-do, South Korea

Soyoung Noh