Lg Display Co., Ltd.

SoYoung Noh

YoungJang Lee

HyoJin Kim

Hyuk Ji

HyunSoo Shin

JinChae Jeon

Jeongoh Kim

UiJin Chung

Eunsung Kim

Wonkyung Kim

Jeihyun Lee

KiTae Kim

Jihye Lee

Kyoungjin Nam

SeungChan Choi

JunHo Lee

SungBin Ryu

Kyeongju Moon

Gisang Hong

Jeanhan Yoon

Bokyoung Cho

SoYeon Je

KyeongJu Moon

Seonhui Hwang

Disclosed is a thin film transistor array comprising a substrate, a first thin film transistor on the substrate, and a second thin film transistor on the substrate, wherein the first thin film transistor includes a first active layer including an oxide semiconductor on the substrate, the first active layer includes a first channel portion, a first conductor portion, and a first middle portion between the first channel portion and the first conductor portion, the second thin film transistor includes a second active layer including an oxide semiconductor on the substrate, the second active layer includes a second channel portion, a second conductor portion, and a second middle portion between the second channel portion and the second conductor portion, and resistivity of the first conductor portion of the first thin film transistor is greater than resistivity of the second conductor portion of the second thin film transistor.

Thin film transistor array, fabrication method thereof, and display apparatus comprising the thin film transistor array

Provided are a display device and a method for manufacturing the same. The display device includes: a connection source electrode and a connection drain electrode connected to a first source electrode a the first drain electrode, respectively by penetrating an isolation insulating layer and a second interlayer dielectric layer to enhance a characteristic of an element and reliability of the display device.

Display device and method for manufacturing the same

A display apparatus includes a substrate having a first substrate, a second substrate, and an inorganic insulating layer between the first substrate and the second substrate. A first buffer layer is on the substrate, wherein the first buffer layer includes n+1 layers, and 'n' is 0 or an even number. A first thin film transistor, a second thin film transistor, and a storage capacitor are each on the first buffer layer. The first thin film transistor includes a first active layer formed of a low temperature poly silicon material. The second thin film transistor includes a second active layer formed of an oxide semiconductor material. The storage capacitor includes a first capacitor electrode and a second capacitor electrode.

Display apparatus

Different types of thin film transistors are disposed on the same flexible substrate and an organic light emitting display using the same includes a display area and a non-display area; a first buffer layer over an entire surface of the flexible substrate; a driving transistor on the buffer layer in the display area, the driving transistor including a polycrystalline silicon (LTPS) layer, a first gate electrode, a first source electrode, and a first drain electrode; a capacitor electrode on the first source electrode of the driving transistor and forming a storage capacitor together with the first source electrode; a switching transistor in the display area to be spaced apart from the driving transistor; and a dummy electrode on the switching transistor, the dummy electrode formed of the same material as the capacitor electrode, and disposed on the same plane as the capacitor.

Hybrid thin film transistor and organic light emitting display device using the same

A display is disclosed which includes a substrate, a first thin film transistor, a second thin film transistor, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first thin film transistor is disposed in a first area on the substrate. The second thin film transistor is disposed in a second area on the substrate. The first storage capacitor electrode is disposed in a third area on the substrate. The oxide layer covers the first thin film transistor and the second thin film transistor, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode includes a first metal layer and a second metal layer, and overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first thin film transistor, the second thin film transistor and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.

Thin film transistor substrate and display using the same

A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs, and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.

An organic light emitting display device can include a substrate, two or more first electrodes positioned on the substrate and spaced apart from one another, an auxiliary electrode positioned between the first electrodes, a barrier rib positioned on the auxiliary electrode and having a reversely tapered structure including at least two layers, a bank layer exposing portions of the first electrodes to define a light emission region, an organic layer positioned in the light emission region and patterned by the barrier rib, and a second electrode positioned on the organic layer and the barrier rib and disposed to be in contact with the auxiliary electrode.

Organic light emitting display device and repair method thereof

The present disclosure relates to an organic light emitting diode display having high aperture ratio and a method for manufacturing the same. The present disclosure suggests an organic light emitting diode display comprising: a plurality of pixel areas disposed in a matrix manner on a substrate; a thin film transistor disposed in the pixel area; an organic light emitting diode connected to the thin film transistor and disposed in the pixel area; and a three-stack storage capacitor having four electrodes connected to the thin film transistor and the organic light emitting diode.

Organic light emitting diode display having high aperture ratio and method for manufacturing the same

Growing community of inventors

Goyang-si, South Korea

SoYoung Noh