Intel Corporation

Micron Technology Incorporated

Sowmiya Jayachandran

Rajesh Sundaram

Kiran Pangal

Frank T Hady

Paul D Ruby

Prashant S Damle

William Low

Robert W Faber

Jawad Basit Khan

Robert J Royer, Jr

Andrew W Vogan

Richard Paul Mangold

Zvika Greenfield

Simon Ramage

Jason A Gayman

Curtis A Gittens

Sahar Khalili

Dimpesh Patel

Joerg Hartung

According to one embodiment, an apparatus is disclosed. The apparatus includes a memory device having a device identification, The apparatus further includes a low power wake circuit configured to receive a low power wake signal and an identification information, and further configured to initiate a transition of the memory device from a low power state to an active state responsive to an active low power wake signal and the wake identification information matching the device identifier.

Apparatuses and methods for exiting low power states in memory devices

A multilevel memory subsystem includes a persistent memory device that can access data chunks sequentially or randomly to improve read latency, or can prefetch data blocks to improve read bandwidth. A media controller dynamically switches between a first read mode of accessing data chunks sequentially or randomly and a second read mode of prefetching data blocks. The media controller switches between the first and second read modes based on a number of read commands pending in a command queue.

Dynamically changing between latency-focused read operation and bandwidth-focused read operation

According to one embodiment, an apparatus is disclosed. The apparatus includes a memory device having a device identification. The apparatus further includes a low power wake circuit configured to receive a low power wake signal and an identification information, and further configured to initiate a transition of the memory device from a low power state to an active state responsive to an active low power wake signal and the wake identification information matching the device identifier.

In an embodiment, a memory controller may determine that one or more neighboring memory cells associated with a target memory cell in a memory device are to be refreshed. The controller may generate a command associated with refreshing the one or more neighboring memory cells. The controller may transfer the command from the memory controller to the memory device containing the target memory cell. The command may direct the memory device to refresh the neighboring memory cells and/or return one or more addresses associated with the neighboring memory cells.

Managing disturbance induced errors

Examples are given for techniques for entry to a lower power state for a memory device or die. The examples to include delaying transitions of the memory device or die from a first higher consuming power state to a second relatively lower power state using one or more programmable counters maintained at or with the memory device.

Techniques for entry to a lower power state for a memory device

A mechanism is described for facilitating power governance of non-volatile memory devices using a power governing mechanism employed at a computing device according to one embodiment of the invention. A method of embodiments of the invention includes maintaining a credit pool having a plurality of credits to be released to a plurality of memory channels associated with a plurality of non-volatile memory devices. The plurality of credits may be used to provide sufficient power to perform memory operations associated with a computing device. The method may further include receiving a credit request having a petition to obtain one or more credits for a memory channel of the plurality of memory channels to facilitate performance of a memory operation, determining whether the one or more credits are available in the credit pool, and retrieving the one or more credits from the credit pool, if the one or more credits are available in the credit pool. The method may further include releasing the one or more credits to the memory channel. The one or more released credits are used to perform the memory operation.

Mechanism for facilitating power and performance management of non-volatile memory in computing devices

A multiple channel storage device may include a host controller to receive input data from a host device and a buffer memory to store the input data and associated error correcting data prior to downstream storage. Multiple storage channels downstream from the buffer memory may store the input data and associated error correcting data in at least one of the storage channels on a non-volatile storage media. An error correcting engine between the host controller and the buffer memory may perform error correction encoding on the input data from the host device to generate the associated error correcting data for storage in the buffer memory. Such error correcting engine may protect against data errors in the buffer memory and in the storage channels.

Growing community of inventors

Portland, OR, United States of America

Sowmiya Jayachandran