Boston University

Soumendra Basu

Uday B Pal

Srikanth Gopalan

Yanchen Lu

Yihong Jiang

Paul Gasper

Jiapeng Xu

A method of preparing a metal nanoparticle on a surface includes subjecting a metal source to a temperature and a pressure in a carrier gas selected to provide a vapor metal species at a vapor pressure in the range of about 10to about 10atm; contacting the vapor metal species with a heated substrate; and depositing the metal as a nanoparticle on the substrate.

Nanoparticle deposition in porous and on planar substrates

A method of manufacturing silicon via a solid oxide membrane electrolysis process, including providing a crucible, providing a flux including silica within the crucible, providing a cathode in the crucible in electrical contact with the flux, and providing an anode disposed in the crucible spaced apart from the cathode and in electrical contact with the flux. The cathode includes a silicon-absorbing portion in fluid communication with the flux. The anode includes a solid oxide membrane around at least a portion of the anode. The method also includes generating an electrical potential between the cathode and anode sufficient to reduce silicon at an operating temperature, and cooling the silicon-absorbing portion to below the operating temperature, and precipitating out the silicon from the silicon-absorbing portion. The silicon-absorbing portion preferentially absorbs silicon, the silicon-absorbing portion is a liquid metal at the operating temperature, and the solid oxide membrane is permeable to oxygen.

Method and apparatus for producing solar grade silicon using a SOM  electrolysis process

Growing community of inventors

Westwood, MA, United States of America

Soumendra Basu