Matsushita Electric Industrial Co., Ltd.

Sougo Ohta

Yoshiyuki Matsunaga

Mikiya Uchida

A semiconductor device includes a semiconductor substrate, an isolation film that is provided in one principal surface of the semiconductor substrate, wiring that is arranged on the isolation film, a diffusion layer that is formed inside the semiconductor substrate and located in the vicinity of the isolation film, and an insulating film that covers the diffusion layer over the one principal surface of the semiconductor substrate. The insulating film further covers a portion of the isolation film near to the diffusion layer and comes into contact with the side of the wiring near to the diffusion layer.

Semiconductor device and method for manufacturing the same

A solid-state imaging device that achieves a reduction in variations appearing on a reproducing screen is provided. The solid-state imaging device includes a plurality of pixel cells that are laid out in matrix form on a semiconductor substrate and a driving unit that is provided to drive the plurality of pixel cells. Each of the plurality of pixel cells includes a photodiode, a MOS transistor, and an element isolating portionthat is formed so that the photodiode and the MOS transistor are isolated from each other. The element isolating portionis formed of a STI (Shallow Trench Isolation) that is a grooved portion of the semiconductor substrate. In the semiconductor substrate, a STI leakage stopperin which an impurity of a conductive type opposite to a conductive type of source/drain regions in the MOS transistor is introduced is formed to enclose side walls and a bottom face of the element isolating portion

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Tonami, Japan

Sougo Ohta