Globalwafers Co., Ltd.

Sunedison Semiconductor Limited

Soubir Basak

Gaurab Samanta

Parthiv Daggolu

Nan Zhang

HyungMin Lee

Sumeet S Bhagavat

Carissima Marie Hudson

Richard Joseph Phillips

Jae-Woo Ryu

Eric Michael Gitlin

Robert J Falster

William L Luter

Igor Peidous

Benjamin Michael Meyer

ByungChun Kim

Hariprasad Sreedharamurthy

Robert Wendell Standley

Kirk D McCallum

Jae Woo Ryu

Hyungmin Lee

Byungchun Kim

A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

Systems for production of low oxygen content silicon

Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.

Methods for forming single crystal silicon ingots with improved resistivity control

Systems and methods for production of low oxygen content silicon

A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1&#xd7;10atoms/cmand/or germanium at a concentration of at least about 1&#xd7;10atoms/cm, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

High resistivity single crystal silicon ingot and wafer having improved mechanical strength

A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.

Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects

A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1&#xd7;1014 atoms/cm3 and/or germanium at a concentration of at least about 1&#xd7;1019 atoms/cm3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.

A system for growing a crystal ingot from a melt includes a crucible assembly configured to contain the melt and a susceptor configured to support the crucible assembly. The crucible assembly includes a substantially transparent crucible. The system further includes a heating system for generating thermal energy and disposed to supply thermal energy to the susceptor via thermal radiation. The susceptor enables transfer of thermal energy to the melt via radiation through the transparent crucible.

Crystal growing systems and methods including a transparent crucible

An method for producing a silicon ingot includes melting polycrystalline silicon in a crucible enclosed in a vacuum chamber to form a melt, generating a cusped magnetic field within the vacuum chamber, dipping a seed crystal into the melt, withdrawing the seed crystal from the melt to pull a single crystal that forms the silicon ingot, wherein the silicon ingot has a diameter greater than about 150 millimeters (mm), and simultaneously regulating a plurality of process parameters such that the silicon ingot has an oxygen concentration less than about 5 parts per million atoms (ppma). The plurality of process parameters include a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt.

Methods for producing low oxygen silicon ingots

Crystal pulling systems for growing monocrystalline ingots from a melt of semiconductor or solar-grade material are described. The crystal pulling systems include seed chuck assemblies designed to reduce formation of deposits on components of the crystal pulling systems by reducing and inhibiting the formation of gas flow recirculation cells within the crystal pulling systems.

Growing community of inventors

Chandler, AZ, United States of America

Soubir Basak