Fuji Electric Co., Ltd.

Sota Watanabe

Takeyoshi Nishimura

Yasushi Niimura

Takumi Fujimoto

Hidenori Takahashi

Takamasa Wakabayashi

Hiroaki Furihata

Makoto Imai

The semiconductor device improves heat dissipation by loading a diode and a MOSFET or IGBT in a single package. A drain electrode disposed on a rear surface of a MOSFET chip is soldered to an upper surface of a first lead frame, and a cathode electrode disposed on a rear surface of a diode chip is soldered to an upper surface of a second lead frame. Rear surfaces of the first lead frame and second lead frame to which neither the diode chip nor the MOSFET chip is connected are disposed so as to be exposed from a sealing resin.

Semiconductor device

A screen oxide film is formed on an n&#x2212; drift layer () that is disposed on an anterior side of an n-type low-resistance layer (), and a nitride film is formed on the screen oxide film. The nitride film is photo-etched using a first mask and thereby, a nitride shielding film () is formed. N-type impurity ions at a concentration higher than that of the n&#x2212; drift layer are implanted through the nitride shielding film () from an anterior side of a semiconductor substrate and are thermally diffused and thereby, an n counter layer () is formed. The screen oxide film is removed. A gate oxide film () is formed. A gate electrode () is formed on the gate oxide film (). P-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode () and the nitride shielding film () as a mask and thereby, p&#x2212; well regions () are formed. N-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode () and the nitride shielding film () as a mask and thereby, n source regions () are formed.

Manufacturing method of semiconductor apparatus and semiconductor apparatus

A screen oxide film is formed on an n-drift layer () that is disposed on an anterior side of an n-type low-resistance layer (), and a nitride film is formed on the screen oxide film. The nitride film is photo-etched using a first mask and thereby, a nitride shielding film () is formed. N-type impurity ions at a concentration higher than that of the n-drift layer are implanted through the nitride shielding film () from an anterior side of a semiconductor substrate and are thermally diffused and thereby, an n counter layer () is formed. The screen oxide film is removed. A gate oxide film () is formed. A gate electrode () is formed on the gate oxide film (). P-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode () and the nitride shielding film () as a mask and thereby, p- well regions () are formed. N-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode () and the nitride shielding film () as a mask and thereby, n source regions () are formed.

A screen oxide film is formed on an n&#x2212; drift layer () that is disposed on an anterior side of an n-type low-resistance layer (), and a nitride film is formed on the screen oxide film. The nitride film is photo-etched using a first mask and thereby, a nitride shielding film () is formed. N-type impurity ions at a concentration higher than that of the n-drift layer are implanted through the nitride shielding film () from an anterior side of a semiconductor substrate and are thermally diffused and thereby, an n counter layer () is formed. The screen oxide film is removed. A gate oxide film () is formed. A gate electrode () is formed on the gate oxide film (). P-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode () and the nitride shielding film () as a mask and thereby, p&#x2212; well regions () are formed. N-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode () and the nitride shielding film () as a mask and thereby, n source regions () are formed.

Growing community of inventors

Nagano, Japan

Sota Watanabe