Jsr Corporation

Sosuke Osawa

Hiromitsu Nakashima

Taiichi Furukawa

Motohiro Shiratani

Miki Tamada

Tomohiko Sakurai

Ken Maruyama

Kazuki Kasahara

Katsuaki Nishikori

Hajime Inami

Ryo Kumegawa

Atsuto Nishii

Kosuke Terayama

Kanako Ueda

Provided are a method for forming a resist pattern that demonstrates excellent performance in sensitivity, resolution, etc. in an exposure step when a next-generation exposure technique is applied, and a radiation-sensitive resin composition. The method for forming a resist pattern includes step (1) of forming a resist film in which a content of a radiation-sensitive acid generator (C) is 0.1% by mass or less, step (2) of exposing the resist film to EUV or an electron beam (EB), and step (3) of developing the resist film exposed in the step (2).

Method for forming resist pattern and radiation-sensitive resin composition

A method for producing a film includes: coating a surface of a substrate with a composition containing a polymer having a structural unit represented by formula (1) and having a number average molecular weight of 13000 or more and a solvent, heating a coating film formed by the coating, and removing, with a rinsing liquid, a part of the coating film after the heating, wherein the rinsing liquid to be used contains a basic compound. In the formula (1), Yis a single bond, &#x2014;CO&#x2014;NR&#x2014;, a divalent aromatic ring group, a divalent group containing &#x2014;O&#x2014;, or a divalent group containing &#x2014;CO&#x2014;NR&#x2014;. Ais a single bond, &#x2014;O&#x2014;, &#x2014;S&#x2014;, or &#x2014;NR&#x2014;. Ris a hydrogen atom, a monovalent hydrocarbon group, a monovalent halogenated hydrocarbon group, or a monovalent group having a heterocyclic structure.

Method for producing film

Provided is a negative resist pattern-forming method that enables a resist pattern with fewer development defects to be formed while favorable water repellency of the surface of the upper layer film is maintained. A negative resist pattern-forming method includes the steps of: forming a resist film using a radiation-sensitive resin composition; forming an upper layer film on one face of the resist film using a composition for upper layer film formation; subjecting the resist film having the upper layer film formed thereon to liquid immersion lithography; and developing the resist film subjected to the liquid immersion lithography with a developer solution containing an organic solvent, wherein at least one of the radiation-sensitive resin composition and the composition for upper layer film formation contains a fluorine atom.

Negative resist pattern-forming method, and composition for upper layer film formation

A resin composition includes a resin A, a resin C, and a solvent. The resin A includes a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A. The resin A has a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A. The resin C includes a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A. A content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass.

Resin composition and method of forming resist pattern

Disclosed herein is a method for producing a composition for resist top coat layer, the method including: polymerizing a monomer solution containing a fluorine-containing monomer in a presence of a polymerization initiator that cleaves to generate an active species having 7 or more carbon atoms in total to obtain a fluorine-containing resin A; and mixing the fluorine-containing resin A and a solvent.

Production method of composition for resist top coat layer, method of forming resist pattern, production method of fluorine-containing resin, and method of improving water repellency of resist top coat layer

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Tokyo, Japan

Sosuke Osawa