Tohoku University

Soshi Sato

Hideo Ohno

Shoji Ikeda

Hiroaki Honjo

Masaaki Niwa

Tetsuo Endo

Tetsuo Endoh

Hideo Sato

A structure used in the formation of a spintronics element, the spintronics element to include a plurality of laminated layers, includes a substrate, a plurality of laminated layers formed on the substrate, an uppermost layer of the plurality of laminated layers being a non-magnetic layer containing oxygen, and a protection layer directly formed on the uppermost layer, the protection layer preventing alteration of characteristics of the uppermost layer while exposed in an atmosphere including HO, a partial pressure of HO in the atmosphere being equal to or larger than 10Pa, no other layer being directly formed on the protection layer.

Spin electronics element and method of manufacturing thereof

A spintronics element including a ferromagnetic layer containing boron, and a diffusion stopper film covering a side face of the ferromagnetic layer partially or entirely, the side face in direct contact with diffusion stopper film, so as to prevent out-diffusion of the boron contained in the ferromagnetic layer. The diffusion stopper film contains boron at a concentration higher than a concentration of the boron in a portion of the ferromagnetic layer where the ferromagnetic layer contacts the diffusion stopper film.

Spintronics element

A method of manufacturing a spintronics element from laminated layers. The method includes (a) forming a plurality of laminated layers in manufacturing equipment, (b) forming a wafer in the manufacturing equipment, including applying a protection layer directly on a non-magnetic uppermost layer of the laminated layers so that the protection layer prevents alteration of characteristics of the uppermost layer, and (c) exposing the wafer, outside of the manufacturing equipment, to an atmosphere that includes HO having a partial pressure in the atmosphere equal to or larger than 10Pa.

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Sendai, Japan

Soshi Sato