Kulite Semiconductor Products, Inc.

Other

Sorin Stefanescu

Alexander A Ned

Joseph R VanDeWeert

Scott J Goodman

Leo Geras

Andrew V Bemis

Anthony D Kurtz

Louis DeRosa

Nora Kurtz

Systems and methods are disclosed for packaging sensors for use in high temperature environments. In one example implementation, a sensor device includes a header; one or more feedthrough pins extending through the header; and a sensor chip disposed on a support portion of the header. The sensor chip includes one or more contact pads. The sensor device further includes one or more wire bonded interconnections in electrical communication with the respective one or more contact pads and the respective one or more feedthrough pins. The sensor device includes a first sealed enclosure formed by at least a portion of the header. The first sealed enclosure is configured for enclosing and protecting at last the one or more wire bonded interconnections and the one or more contact pads from an external environment.

High temperature protected wire bonded sensors

The disclosed technology includes an oil-filled pressure transducer assembly and an oil-filled compensating sensing element disposed near one another and attached to a common housing. The oil-filled pressure transducer assembly may receive and measure pressure media via a first oil-filled cavity and a protective diagram in communication with the pressure media. The compensating sensing element may be isolated from the pressure media. In certain example implementations, the compensating sensing element is configured to measure certain common error phenomena that are also measured by the oil-filled pressure transducer assembly, for example, due to acceleration, temperature, and/or vibration. In certain implementations, the signal measured by the compensating sensing element may be subtracted from the signal measured by the oil-filled pressure transducer assembly to provide a compensated output signal.

Oil filled transducers with isolated compensating capsule

A method for fabricating silicon-on-insulator (SOI) semiconductor devices, wherein the piezoresistive pattern is defined within a blanket doped layer after fusion bonding. This new method of fabricating SOI semiconductor devices is more suitable for simpler large scale fabrication as it provides the flexibility to select the device pattern/type at the latest stages of fabrication.

Methods of fabricating silicon-on-insulator (SOI) semiconductor devices using blanket fusion bonding

Certain implementations of the disclosed technology include systems and methods for providing header assemblies for use with pressure sensors in high-temperature environments. Certain example implementations include a header assembly. The header assembly can include a header portion having a first side and a second side, the header portion including one or more bores extending through the header portion from the first side to the second side. In certain example implementations, one or more platinum header pins are disposed within and extending through the one or more bores of the header portion. In certain example implementations, the header assembly can include one or more brazing portions corresponding to the one or more platinum header pins. In certain example implementations, the platinum header pins are configured for electrical communication with corresponding electrodes of a leadless transducer element.

High-temperature headers for sensing elements

Systems and methods are disclosed for providing an interconnection for extending high-temperature use in sensors and other electronic devices. The interconnection includes a semiconductor layer; an ohmic contact layer disposed on a first region of the semiconductor layer; an insulating layer disposed on a second region of the semiconductor layer, where the second region differs from the first region; a metal layer disposed above at least the insulating layer and the ohmic contact layer; and a connecting conductive region disposed on the metal layer and in vertical alignment with a third region of the semiconductor layer. The third region differs from the first region and is offset from the ohmic contact layer at the first region. The offset is configured to extend an operational lifetime of the interconnection apparatus, particularly when the interconnection apparatus is exposed to high temperature environments.

Electronic device interconnections for high temperature operability

Systems and methods are disclosed for a pressure sensor device. The pressure sensor device includes a header that defines an interior cavity including one or more tether connecting regions. The header further defines an outer portion in communication with the interior cavity; the outer portion includes a plurality of through bores in communication with an exterior portion of the header for insertion of header pins through the header. The pressure sensor device includes a pressure sensor chip disposed within the interior cavity of the header. One or more anchoring tethers are attached to the corresponding one or more tether connecting regions. The pressure sensor chip is free to move within the interior cavity of the header, and the one or more anchoring tethers are in communication with the pressure sensor chip and are configured to limit movement of the pressure sensor chip within the header.

Low-stress floating-chip pressure sensors

Aspects of the present disclosure relate to a pressure sensor header for use with a pressure-sensing device. The pressure sensor header can be used in high-temperature environments. A pressure sensor header of the present disclosure can include a header shell, a sealing header glass that is sealed to the header shell, one or more electrical connections electrically isolated from the header shell by the sealing header glass, and a plate for sealing to a pressure-sensing device to be incorporated onto the pressure sensor header. The plate may include one or more ribs that allow for sealing of the plate to the header shell. The pressure sensor header may include a ribbed insert for sealing to the header shell and plate.

High-temperature headers with ribbed components for stress-relieved hermetic sealing

This disclosure provides example methods, devices, and systems for a sensor co-located with an electronic circuit. In one embodiment, a sensor assembly may comprise a semiconductor device configured to include a sensor having a sensing element, an electronic circuit and wherein the sensing element and the electronic circuit are hermetically sealed in the same sensor assembly; and wherein the sensor assembly is capable of outputting an environmental condition signal associated with an environmental condition measured by the sensor.

Sensor co-located with an electronic circuit

A dual diaphragm pressure transducer, or sensor, with compensation for non-pressure effects is disclosed. The pressure sensor can include two pressure transducers located on separate portions of a chip. The first pressure transducer can be a differential pressure transducer, which produces a signal proportional to one or more applied pressures and includes other non-pressure effects. The second pressure transducer can be sealed in a hermetic chamber and thus can produce a signal proportional only to non-pressure effects. The signals can be combined to produce a signal proportional to the applied pressures with no non-pressure effects. The first and second pressure transducers can be physically and/or electrically isolated to improve sealing between the two pressure transducers and prevent pressure leaks therebetween.

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New Milford, NJ, United States of America

Sorin Stefanescu