Samsung Electronics Co., Ltd.

Sora You

Heonjong Shin

Doohyun Lee

Yongsik Jeong

Minchan Gwak

Sunghun Jung

Sangwon Jee

Hyun-Seung Song

Yeongchang Roh

A semiconductor device comprising a gate electrode on a substrate, a source/drain pattern on the substrate on a side of the gate electrode, and a gate contact plug on the gate electrode are disclosed. The gate contact plug may include a first gate contact segment, and a second gate contact segment that extends in a vertical direction from a top surface of the first gate contact segment. An upper width of the first gate contact segment may be greater than a lower width of the second gate contact segment.

Method of fabricating semiconductor devices including a fin field effect transistor

A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode running across the active pattern and extending in a second direction intersecting the first direction, a source/drain pattern on the active pattern and adjacent to a side of the gate electrode, an active contact in a contact hole exposing the source/drain pattern, an insulating pattern filling a remaining space of the contact hole in which the active contact is provided, a first via on the active contact, and a second via on the gate electrode. The active contact may include a first segment that fills a lower portion of the contact hole and a second segment that vertically protrudes from the first segment. The first via is connected to the second segment. The insulating pattern is adjacent in the first direction to the second via.

Active regions via contacts having various shaped segments off-set from gate via contact

Semiconductor devices inlcluding a fin field effect transistor

Semiconductor device

Growing community of inventors

Cheonan-si, South Korea

Sora You