Samsung Electronics Co., Ltd.

Sophie Roquet

Jean Roncali

Philippe Leriche

Pierre Frere

Antonio Cravino

Won Cheol Jung

Sang Cheol Park

Disclosed herein are a novel nitrogen semiconductor compound simultaneously including groups with different electrical properties and a device fabricated using the nitrogen semiconductor compound as an organic semiconductor material or a hole conducting material. The nitrogen semiconductor compound can be spin-coated at room temperature when applied to the fabrication of the device, and has superior electrical conductivity and photovoltaic properties.

Nitrogen semiconductor compound and device fabricated using the same

Low molecular weight conjugated nitrogen compounds having linear conjugated chains, and devices fabricated using the conjugated nitrogen compounds as organic semiconductor materials, hole conducting materials, or light-emitting materials. The conjugated nitrogen compounds can be spin-coated at room temperature, are stable, and has superior electrical conductivity.

Low molecular weight conjugated nitrogen compounds and devices fabricated using the same

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Angers, France

Sophie Roquet