Stmicroelectronics S.a.

Sophie Gimonet

Franck Duclos

The invention concerns a pulsed bistable bidirectional electronic switch comprising a monolithic semiconductor circuit formed from a substrate () whereof the rear surface (A) is coated with a metallization connected to earth. Said circuit comprises a vertical bidirectional switch (T, T) provided with a first gate terminal (M), whereof the main electrode (A) on the side of the front surface is connected to a load and an alternating current supply; a horizontal thyristor (T) comprising an upper layer () of the vertical bidirectional switch, a first P-type region (), and a second N-type region () formed in the first region; a second gate terminal (G) connected to one of the first and second regions, the other being connected to earth. A capacitor (C) is connected to the first gate terminal (G) and to the alternating current supply (VAC).

Pulsed bistable bidirectional electronic switch

A device for protecting a structure of SOI type including several insulated cells, each cell being formed of a portion of a semiconductor substrate of a first conductivity type having its bottom and its lateral walls delimited by an insulating area. A protective cell includes a first semiconductor region of the second conductivity type connected to a reference potential and several second regions of the second conductivity type separated from one another and from the first region. The substrate portion of each of the cells other than the protective cell is connected to one of the second regions.

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Tours, France

Sophie Gimonet