Novellus Systems Incorporated

Aixtron Se

Aixtron, Inc.

Nuscale Power, LLC

Plasmasi, Inc.

Sooyun Joh

Stephen E Savas

Allan B Wiesnoski

Carl Galewski

Sai Mantripragada

John T Groome

James Allan Nylander

David Cohen

Edward J McInerney

Colin F Smith

Peter Krotov

Randy Hall

Hood Chatham

Dave Marquardt

David E Bowser

Neil J Merritt

Kevin D Jennings

George A Gilbert

Stephen Edward Savas

A method and apparatus are provided for plasma-based processing of a substrate based on a plasma source having a first, second and third electrodes disposed above a pedestal. The second electrode is disposed between the first and third electrodes. A first gap is formed between the first electrode and the pedestal and between the third electrode and the pedestal. A second gap is formed between the first and second electrodes, and a third gap is formed between the second and third electrodes. A first radio frequency (RF) power supply is connected to the first and third electrodes and is configured to predominantly deliver power to plasmas located in the first gap. A second RF power supply is connected to the second electrode and is configured to predominantly deliver power to plasmas located in the second and third gaps. In such a configuration, the power density of the plasmas located in the first gap can be independently controlled relative to the power density of the plasmas located in the second and third gaps.

Methods for forming thin protective and optical layers on substrates

A steam generator for a nuclear reactor comprises plenums proximate with a first plane, wherein the first plane intersects a bottom portion of a riser column of a reactor vessel. The steam generator may further comprise plenums proximate with a second plane, approximately parallel with the first plane, wherein the second plane intersects a top portion of the riser column of the reactor vessel. The steam generator may further include a plurality of steam generator tubes that convey coolant from a plenum located proximate with the first plane to one of the plenums proximate with the second plane.

Steam generator for a nuclear reactor

Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.

Plasma generating units for processing a substrate

Methods for plasma processing

The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.

Apparatus and method for dielectric deposition

Each of plurality of gas sources flows to a different one of a plurality of separate source gas flow paths. Then, a source gas is distributed directly from each of plurality of separate source gas flow paths to a plurality of separate gas mixture flow paths, thereby distributing a plurality of source gases to each of different flow paths. A plurality of separate gas mixture streams is generated by flowing a plurality of source gases in each of a plurality of separate gas mixture flow paths. In some embodiments, each of a plurality of separate source gas flow paths comprises a gas distribution duct, and each of a plurality of gas mixture flow paths comprises a gas mixing conduit. In some embodiments, a gas distribution duct includes a plurality of gas distribution ports and a gas source port connectable to a gas source. In some embodiments, a gas mixing conduit comprises a plurality of gas inlet holes, a gas mixing region, and a gas outlet hole. Each of the gas inlet holes is connectable to a gas distribution duct and is operable to conduct a source gas into the gas mixing region. A plurality of gases is mixed in the mixing region to form a gas mixture. A gas manifold is operable to mix a plurality of source gases in a plurality of gas mixing conduits to generate a plurality of gas mixtures having different gas compositions and flow rates.

Flexible gas mixing manifold

An assembly for a chemical-mechanical polishing process includes a platen having an outer edge, a top surface, and at least one inlet for introducing fluid to the top surface; a manifold system, entrenched in the top surface and in communication with the at least one inlet, for channeling the fluid about the top surface; a polishing pad having a top pad surface, and a plurality of fluid delivery through-holes for introducing the fluid from the manifold system to the top pad surface; and a fluid distribution system, entrenched in the top pad surface and in communication with the through-holes, for substantially uniformly distributing the fluid about the top pad surface. The fluid distribution system includes a set of intersecting first grooves defining an array of lands, each of the first grooves having a first cross sectional area. The fluid distribution system also includes a plurality of second grooves disposed within each of the lands and communicating with the first grooves, each of the second grooves having a second cross sectional area that is smaller than the first cross sectional area.

Uniform fluid distribution and exhaust system for a chemical-mechanical planarization device

In one embodiment, a mixing device includes a nozzle that is disposed tangent to a wall of a chamber. Gas flowing from the nozzle rotates in the chamber forming a vortex. Another gas may be flown near a middle portion of the chamber, thereby uniformly mixing the two gases. In another embodiment, an evaporation and mixing device includes a nozzle configured to impart rotation to a gas flowing into a chamber. An injector flows a liquid material near a middle portion of the chamber, thereby mixing the gas and the liquid material. A heater may be employed to help evaporate the liquid material.

Mixing of materials in an integrated circuit manufacturing equipment

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Fremont, CA, United States of America

Sooyun Joh