Samsung Electronics Co., Ltd.

Sooyeon Jeong

Yoonhae Kim

Donghyun Kim

Joon Goo Hong

Yongjin Kim

Jin Wook Lee

Dohyoung Kim

Sejin Park

Myungil Kang

Myeongcheol Kim

Inhyun Song

Jonghoon Baek

Taeyeon Shin

Yeongmin Jeon

Juyun Park

A semiconductor device may include: a dummy gate structure including a first gate pattern in which dummy gate lines extending in one direction are connected to each other on a substrate, and a second gate pattern in which dummy gate lines extending in the one direction are connected to each other on the same line with the first gate pattern; and a third gate pattern extending in parallel with the dummy gate structure on one side of the dummy gate structure.

Semiconductor device including dummy gate patterns and manufacturing method thereof

A semiconductor device includes first and second active regions. Each active region includes a plurality of fin protrusions and a recessed area disposed between the fin protrusions. A plurality of gate structures are disposed on each of the plurality of fin protrusions. A semiconductor layer is disposed in each recessed area. A distance between the gate structures of the first active region is the same as a distance between the gate structures of the second active region, and a height difference between a bottom surface of the semiconductor layer of the first recessed area and a top surface of each of the fin protrusions of the first active region is smaller than a height difference between a bottom surface of the semiconductor layer of the recessed area of the second active region and a top surface of each of the fin protrusions of the second active region.

Semiconductor device

A semiconductor device and a method of forming the semiconductor device includes: forming gate electrodes on a semiconductor substrate and forming spacers on both side surfaces of the gate electrodes; forming capping patterns on the gate electrodes; and forming a metal contact between the gate electrodes. Each of the capping patterns is formed to have a width greater than a width of each of the gate electrodes.

Semiconductor device and method of forming the same

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Hwaseong-si, South Korea

Sooyeon Jeong