Samsung Electronics Co., Ltd.

Soonwon Hwang

Younghan Kim

Hyun-Chul Yoon

Seokhyun Lim

Jin Il Oh

A method of fabricating a semiconductor device with conductive patterns comprises sequentially forming an etch-target layer and a middle mold layer on a substrate, forming a first upper mold pattern and a second upper mold pattern on the middle mold layer to have top surfaces at different levels, etching the middle mold layer using the first and second upper mold patterns as an etch mask to form first and second middle mold patterns, respectively, forming a third middle mold pattern between the first and second middle mold patterns, and etching the etch-target layer using the first to third middle mold patterns as an etch mask to form conductive patterns.

Growing community of inventors

Seoul, South Korea

Soonwon Hwang