Electronics and Telecommunications Research Institute

Soon Won Jung

Byoung Gon Yu

Sung Min Yoon

Seung Youl Kang

Young Sam Park

Chi Sun Hwang

Seung Yun Lee

Chun Won Byun

Shin Hyuk Yang

Kyoung Ik Cho

Jae Bon Koo

In-Kyu You

Sang Hee Park

Doo Hee Cho

Yong-Young Noh

Joon Suk Lee

Yong Suk Yang

Kang Dae Kim

Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.

Nonvolatile memory cell and method of manufacturing the same

Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

Transparent nonvolatile memory thin film transistor and method of manufacturing the same

Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.

Method for fabricating phase change memory device using solid state reaction

A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.

Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same

A composition for an organic dielectric, includes a compound represented by Formula 1 below; and a cross-linking agent, wherein, in Formula 1, Ris any one of hydrogen, hydroxyl group, ester group, amide group, or alkyl group or alkoxy group of a carbon number of 1 to 12, Ris selected from electrolytic functional groups, each of a and b is a positive integer, and the ratio of b to a (b/a) is larger than 0 and smaller than 99, 

Composition for an organic dielectric

Provided are a resistive memory device and a method of fabricating the same. The resistive memory device comprises an electron channel layer formed by means of a swelling process and an annealing process. Thus, conductive nanoparticles are uniformly dispersed in the electron channel layer to improve reliability of the resistive memory device. According to the method, an electron channel layer is formed by means of a printing process, a swelling process, and an annealing process. Thus, fabrication time is reduced.

Resistive memory device and method of fabricating the same

Electrical device using phase change material, phase change memory device using solid state reaction and method for fabricating the same

A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a GeSbTephase-change material to ensure the stability of a memory operation, and simultaneously, the subsidiary regions formed of a GeSbTephase-change material are disposed respectively on and under the GeSbTemain operating region to prevent leakage of thermal energy through an electrode, thereby reducing power consumption.

Growing community of inventors

Daejeon, South Korea

Soon Won Jung