X-fab Semiconductor Foundries Ag

Soon Tat Kong

Paul Ronald Stribley

David John Verity

A PN junction includes first and second areas of silicon, wherein one of the first and second areas is n-type silicon and the other of the first and second areas is p-type silicon. The first area has one or more projections which at least partially overlap with the second area, so as to form at least one cross-over point, the cross-over point being a point at which an edge of the first area crosses over an edge of the second area.

PN junctions and methods

A capacitor has first and second conducting plates and a dielectric region between the plates, wherein the dielectric region comprises two dielectric materials for each of which the variation of capacitance with voltage can be approximated by a polynomial having a linear coefficient and a quadratic coefficient, and wherein the quadratic coefficients of the two dielectric materials are of opposite sign. The capacitor comprises for example a first capacitor () and a second capacitor () that one connected in an anti-parallel manner. The insulating layer () of the first capacitor comprises silicon nitride and the insulating layer () of the second capacitor comprises silicon dioxide.

Growing community of inventors

Sarawak, Malaysia

Soon Tat Kong