Samsung Electronics Co., Ltd.

Soon Oh Park

Jung Moo Lee

Seong Geon Park

Jong Uk Kim

Jeong Hee Park

A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.

Growing community of inventors

Suwon-si, South Korea

Soon Oh Park