Samsung Electronics Co., Ltd.

Soon-min Hong

Min-Young Park

Gyun Heo

Young-chul Lee

Young-jun Moon

Ja-myeong Koo

Jeong-gen Yoon

Koang-soo Kim

Young-Jun Moon

Sea-Gwang Choi

Ja-Myeong Koo

Jeong-Gen Yoon

The present invention relates to an electronic device having a metal case, the electronic device comprising: a metal case having at least one electronic circuit or antenna formed therein; a metal pad arranged at the metal case and electrically connected to the at least one electronic circuit or antenna; a metal sheet attached to one surface of the metal pad; and an electronic circuit board electrically connected to the at least one electronic circuit or antenna of the metal case through a metal instrument for connection which detachably contacts the metal sheet.

Electronic device having metal case and metal case used for same

A zoom switch assembly for an image photographing apparatus includes a fixing member which includes a flat unit, a rotating member which is mounted rotatably with respect to the fixing member, an electric conductivity unit which is mounted on the rotating member to rotate opposite the flat member, and a position detection pattern which is formed along a rotation trace of the electric conductivity unit on the flat unit of the fixing member, and through which electricity flows selectively according to a rotation angle of the electric conductivity unit.

Zoom switch assembly, image photographing apparatus having the same, and method of controlling zoom lens

A method of fabricating and mounting a flip chip includes using an environmentally friendly plasma gas, which minimizes safety hazards during an implementation of the method and does not require an additional heat source during a reflow process thereof. That is, the method includes reflowing a solder bump using an argon-hydrogen plasma process. The argon-hydrogen plasma process used to fabricate the flip chip includes maintaining a pressure in a chamber at 250 to 270 mtorr, feeding a mixed gas of argon with 10 to 20% hydrogen to the chamber to generate a plasma with power of 100 to 200 W, and exposing the flip chip to the plasma for 30 to 120 seconds. Additionally, an argon-hydrogen plasma process used to mount the flip chip includes maintaining pressure in a chamber at 100 to 400 mtorr, feeding a mixed gas of argon with 0 to 20% hydrogen to the chamber to generate a plasma with power of 10 to 50 W, and exposing the flip chip to the plasma for 10 to 120 seconds.

Method of fabricating and mounting flip chips

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Seoul, South Korea

Soon-min Hong