Gsi Technology, Inc.

Soon-Kyu Park

Lee-Lean Shu

Paul M-Bhor Chiang

Gi-Won Cha

Systems, methods and fabrication processes relating to dynamic random access memory (DRAM) devices involving data signals grouped into 10 bits are disclosed. According to one illustrative implementation a DRAM device may comprise a memory core, circuitry that receives a data bus inversion (DBI) bit associated with a data signal as input directly, without transmission through DBI logic associated with an input buffer, circuitry that stores the DBI bit into the memory core, reads the DBI bit from the memory core, and provides the DBI bit as output. In further implementations, DRAM devices herein may store and process the DBI bit on an internal data bus as a regular data bit.

Systems and methods involving data bus inversion memory circuitry, configuration and/or operation including data signals grouped into 10 bits and/or other features

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San Jose, CA, United States of America

Soon-Kyu Park