Taiwan Semiconductor Manufacturing Comp. Ltd.

Soon Kang Huang

Chih-Lung Lin

Chyi-Shyuan Chern

Chun-Hung Chen

Chyi Shyuan Chern

Weng-Liang Fang

Chung-Ru Yang

Shuang-Neng Peng

Yi-Pin Chang

Tung Long Lai

A method includes dividing a semiconductor wafer into a plurality of dies areas, generating a map of the semiconductor wafer, scanning each of the plurality of die areas of the semiconductor wafer with a laser, and adjusting a parameter of the laser during the scanning based on a value of the die areas identified by the map of the semiconductor wafer. The map characterizing the die areas based on a first measurement of each individual die area.

Field-by-field laser annealing and feed forward process control

A method for processing a semiconductor wafer comprises measuring data indicating an amount of warpage of the wafer. At least two different voltages are determined, based on the amount of warpage. The voltages are to be applied to respective portions of the wafer by an electrostatic chuck that is to hold the wafer. The at least two different voltages are applied to hold the respective portions of the wafer while performing a fabrication process on the wafer.

Multi-zone electrostatic chuck and chucking method

A retainer ring and a method of using the retainer ring are provided. The retainer ring has openings along a bottom surface. Grooves encompass the openings and extend to an interior portion of the retainer ring wherein a semiconductor wafer may be held. In operation, a semiconductor wafer is placed inside the retainer ring. As the retainer ring and the semiconductor wafer are moved relative to an underlying polishing pad, slurry is dispensed through the openings in the retainer ring. The grooves in the retainer ring allow the slurry to flow from the openings to the interior portion of the retainer ring and the semiconductor wafer.

Retainer ring

Methods of forming a contact structure, contact structures and apparatuses applied thereto are disclosed. The method of forming a contact structure forms a dielectric layer on a substrate. A metal contact with metal oxide thereon is formed in the dielectric layer. The solubility of the metal oxide is enhanced by using HO with a temperature higher than about 10&#xb0; C. or a chemical with a temperature higher than about 15&#xb0; C.

Growing community of inventors

Hsinchu, Taiwan

Soon Kang Huang