Samsung Electronics Co., Ltd.

Soon Ik Cho

Changseop Yoon

Jae Jin Jung

Jun An Lee

Seung Woo Lim

Takao Ishii

Ho Jong Ha

Hee Kwan Kim

An image sensor includes a pixel array and a readout circuit. The pixel array includes a first unit pixel region including first, second and third sub-pixel regions having a first color filter, sequentially disposed along a first row line, and sharing a first floating diffusion region, and a second unit pixel region including a first, second and third sub-pixel regions having a second color filter, sequentially disposed along a second row line, and sharing a second floating diffusion region. The readout circuit includes a first analog-digital converter receiving a first pixel signal from the first unit pixel region through a first pixel signal output line and converting the first pixel signal into digital data, and a second analog-digital converter receiving a second pixel signal from the second unit pixel region through a second pixel signal output line and converting the second pixel signal into digital data, wherein at least one of the first unit pixel region and the second unit pixel region further includes a phase detection pixel region.

Image sensor with shared floating diffusion region

An image sensor including: a pixel array having a plurality of pixels connected to a plurality of row lines and a plurality of column lines; a plurality of ramp buffers configured to output a ramp voltage generated by a ramp voltage generator; a sampling circuit including a plurality of samplers, each of the plurality of samplers having a first input terminal for receiving the ramp voltage and a second input terminal connected to one of the plurality of column lines; and a switching circuit configured to connect the first input terminals of the samplers to each other or disconnect the first input terminals of the samplers from each other.

Image sensor

A semiconductor device can include a plurality of active patterns protruding from a substrate and spaced apart on the substrate by first and second distances. A plurality of selective epitaxial growth portions can be each grown on an upper surface of a respective one of the plurality of active patterns. A source/drain contact can be extending across the plurality of selective epitaxial growth portions to remain above top surfaces of first ones of plurality of active patterns that are spaced apart by the first distance between the first ones of plurality of active patterns and can include an extension that extends toward the substrate to below top surfaces of two of the plurality of active patterns that are spaced apart by the second distance between the two of the plurality of active patterns.

Semiconductor devices including increased area contacts

A mobile terminal is provided in which gaps between keys provided in a second main body change as a first main body moves. The mobile terminal includes a first main body; a second main body having a plurality of keys; and a hinge connecting the first main body and the second main body, wherein when the first main body opens from the second main body, the second main body extends and gaps between the plurality of keys are widened, and when the first main body closes on the second main body, the second main body retracts and the gaps between the plurality of keys are narrowed. Therefore, when the mobile terminal is opened, gaps between keys provided in the mobile terminal are widened and thus a user can more conveniently use the keys provided in the mobile terminal.

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Seoul, South Korea

Soon Ik Cho