Adrc. Co. Kr

Soon Ho Choi

Chae Yeon Hwang

Hyo Min Kim

Suhui Lee

Disclosed are a crystallization process of an oxide semiconductor, a method of manufacturing a thin film transistor including the same, a thin film transistor, a display panel, and an electronic device. The crystallization process of an oxide semiconductor includes forming an amorphous oxide semiconductor layer on a substrate, forming a crystallization auxiliary layer including a light absorbing inorganic material on the amorphous oxide semiconductor layer, and annealing the crystallization auxiliary layer to crystallize the amorphous oxide semiconductor layer.

Crystallization process of oxide semiconductor, and method of manufacturing thin film transistor, a thin film transistor, a display panel, and an electronic device

Disclosed are a crystalline oxide semiconductor thin film including a crystalline oxide semiconductor including indium, gallium, and tin, the crystalline oxide semiconductor exhibiting a (009) diffraction peak in an X-ray diffraction spectrum, and a method of forming the same, a thin film transistor and a method of manufacturing the same, a display panel, and an electronic device.

Crystalline oxide semiconductor thin film, and method of forming the same and thin film transistor and method of manufacturing the same and display panel and electronic device

Growing community of inventors

Yongin-si, South Korea

Soon Ho Choi