Samsung Electronics Co., Ltd.

Soon-Gun Lee

Han-jin Lim

Hyun Uk Park

Sung-Jin Kim

Jong-myeong Lee

Dong-Hyun Im

Youn-soo Kim

Seok-Woo Nam

Eun-Ae Cho

Chin-Moo Cho

Methods of fabricating a semiconductor device may include forming guide patterns exposing base patterns, forming first nanowires on the base patterns by performing a first nanowire growth process, forming a first molding insulating layer between the first nanowires, forming holes exposing surfaces of the base patterns by removing the nanowires, and forming first electrodes including a conductive material in the holes.

Methods of fabricating semiconductor devices using nanowires

A semiconductor device includes a capacitor with reduced oxygen defects at an interface between a dielectric layer and an electrode of the capacitor. The semiconductor device includes a lower metal layer; a dielectric layer on the lower metal layer and containing a first metal; a sacrificial layer on the dielectric layer and containing a second metal; and an upper metal layer on the sacrificial layer. An electronegativity of the second metal in the sacrificial layer is greater than an electronegativity of the first metal in the dielectric layer.

Semiconductor devices including diffusion barriers  with high electronegativity metals

Growing community of inventors

Hwaseong-si, South Korea

Soon-Gun Lee