The Industry & Academic Cooperation in Chungnam National University (iac)

Kuk-il Graphene Co., Ltd.

Kuk-ii Graphene Co., Ltd.

Soon-Gil Yoon

Byeong-Ju Park

Hyung-Jin Choi

Duy Nguyen

Yi-Re Han

Nak-Jin Seong

Je-Cheon Ryu

Jun-Ku Ahn

Sang-Yong Jeon

Dong-Jin Kim

Disclosed is a high-quality and high-functional graphene-based TFT, including: a gate electrode, a gate insulating layer disposed on the gate electrode; an active layer including a nitrogen-doped graphene layer, on which disposed in a partial region of the gate insulating layer; a first electrode disposed on a region of one side of the active layer; and a second electrode disposed on a region of the other side of the active layer. The present invention allows obtaining the TFT having excellent characteristics by directly growing graphene on a Ti layer, implementing damages with remote plasma, and doping with nitrogen gas to fabricate a graphene active layer.

Graphene-based TFT comprising nitrogen-doped graphene layer as active layer

The present invention relates to a transfer-free method for producing a graphene thin film, which may form a high-quality graphene layer having excellent crystallinity on a substrate without a transfer process, and to a method of fabricating a device using the transfer-free method. More specifically, the present invention relates to a transfer-free method for producing a graphene thin film and a method for fabricating a device using the transfer-free method, the methods including the steps of: (A) forming a titanium buffer layer on a target substrate; and (B) growing a graphene thin film on the titanium buffer layer, wherein process are performed in an oxygen-free atmosphere throughout the steps (A) to (B).

Transfer-free method for producing graphene thin film

The present invention relates to a transfer-free method for forming a graphene layer, in which a high-quality graphene layer having excellent crystallinity can be easily formed over a large area at low temperature by a transfer-free process so that it can be applied directly to a base substrate, which is used in a transparent electrode, a semiconductor device or the like, without requiring a separate transfer process, and to an electrical device comprising a graphene layer formed by the method. More specifically, the transfer-free method for forming a graphene layer comprises the steps of: depositing a Ti layer having a thickness of 3-20 m on a base substrate by sputtering; and growing graphene on the deposited Ti layer by chemical vapor deposition.

Transfer-free method for forming graphene layer

The present invention relates to an antimicrobial glass having both electromagnetic shielding and antimicrobial characteristics while maintaining the transparency of glass, and more particularly to an optically transmissive antimicrobial glass with an electromagnetic shielding effect that includes an AZO/Ag/AZO multilayer thin film deposited on a glass substrate.

Optically transmissive antimicrobial glass with shielding effect for electromagnetic wave

Disclosed herein is a method for manufacturing (In)&#x2014;(Sb)&#x2014;(Te) (IST) nanowires and a phase-change memory device comprising the nanowires. The method comprises providing a substrate and vapors of In, Sb and Te precursors in a chamber and allowing the vapors to react with each other on the substrate in the chamber at a temperature of 230-300&#xb0; C. and a pressure of 7-15 Torr. With the method, IST nanowires can be fabricated cost-effectively.

Method for fabricating indium (In)-antimony (Sb)-tellurium (Te) nanowires and phase-change memory device comprising the nanowires

A method to deposit a thin film on a flexible polymer substrate at room temperature comprising heating source vapor, which is vaporized by an evaporator, in a shower head in a reaction chamber so that the source vapor is thermally decomposed to be converted into the nano-size single phase; and depositing the source vapor in the nano-size single phase on the flexible polymer substrate which is not separately heated.

Method for room temperature chemical vapor deposition on flexible polymer substrates

The present invention relates to a thin-film resistor for an attenuator that is utilized in the fourth generation mobile communication, and more specifically, to a thin-film resistor having a Ti(N) thin film formed on an aluminum nitride (ALN) substrate. The thin-film resistor of the invention has superior electrical characteristics, such as sheet resistance, and superior characteristics in change of attenuation and voltage standing wave ratio (VSWR) with respect to changes of frequency and L/W, and thus the thin-film resistor can be utilized in a high frequency domain of up to 6 GHz.

Growing community of inventors

Daejeon, South Korea

Soon-Gil Yoon