Samsung Electronics Co., Ltd.

Soon-Beom Huh

Hong-Sick Park

Byung-Uk Kim

Jong-Hyun Jeong

Suk-Il Yoon

Wy-Yong Kim

Seong-Bae Kim

Jong-Hyun Choung

Bong-Kyun Kim

Sun-Young Hong

Doo-Young Jang

Sung-Gun Shin

Se-Hwan Jung

Byeong-Jin Lee

Young-Joo Choi

Nam-Seok Suh

Sun-Joo Park

Oh-Hwan Kweon

Byeoung-Jin Lee

A composition for removing a photoresist includes a) an amine compound having a cyclic amine and/or a diamine, b) a glycol ether compound, c) a corrosion inhibitor and d) a polar solvent. The composition further includes a stripping promoter. Further disclosed is a method of manufacturing an array substrate using the composition for removing a photoresist.

Composition for removing photoresist and method of manufacturing an array substrate using the same

The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.

Composition for stripping photoresist and method for manufacturing thin transistor array panel using the same

A composition for a photoresist stripper and a method of fabricating a thin film transistor array substrate are provided according to one or more embodiments. In one or more embodiments, the composition includes about 5-30 weight % of a chain amine compound, about 0.5-10 weight % of a cyclic amine compound, about 10-80 weight % of a glycol ether compound, about 5-30 weight % of distilled water, and about 0.1-5 weight % of a corrosion inhibitor.

Composition for photoresist stripper and method of fabricating thin film transistor array substrate

Composition for stripping photoresist and method for manufacturing thin film transistor array panel using the same

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Siheung-si, South Korea

Soon-Beom Huh