Other

Kabushiki Kaisha Toshiba

Skhynix Inc.

Sook Joo Kim

Hiroaki Yoda

Masatoshi Yoshikawa

Tadashi Kai

Masahiko Nakayama

Masaru Toko

Yutaka Hashimoto

Choon Kun Ryu

Hyung Suk Lee

Jae Geun Oh

Keum Bum Lee

According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.

Magnetoresistive element and method of manufacturing the same

Growing community of inventors

Icheon-si, South Korea

Sook Joo Kim