Samsung Electronics Co., Ltd.

Soojung Hwang

Sang-min Lee

Deok-kee Kim

Sangmoo Choi

Il-Sub Chung

Junghun Sung

Deokkee Kim

An e-fuse structure includes an anode, a cathode, a fuse part connecting the anode and the cathode to each other, and a dielectric contacting the fuse part. The dielectric is configured to apply a stress to the fuse part, where the stress constructively acting on a migration effect of atoms constituting the fuse part. The migration effect is generated by electromigration and thermomirgration.

E-fuse structure of semiconductor device

Provided may be a multi-level anti-fuse and methods of fabricating and operating the same. The multi-level anti-fuse may include at least three anti-fuses having a plurality of anti-fuses connected in parallel constituting a parallel connection structure and at least one anti-fuse connected to the parallel connection structure in series, wherein the parallel connection structure may have a smaller resistance than the resistance of the anti-fuse connected in series, the plurality of anti-fuses connected in parallel may include dielectric layers having different thicknesses from one another, and the breakdown voltages of each dielectric layer may be different from one another.

Multi-level anti-fuse and methods of operating and fabricating the same

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Gunpo-si, South Korea

Soojung Hwang