Samsung Electronics Co., Ltd.

Soojin Jeong

Seungmin Song

Junggil Yang

Junbeom Park

Dong Il Bae

Geumjong Bae

Sunwook Kim

Bongseok Suh

Chang-Hwan Kim

Sun-Young Park

Joong-Hun Kwon

Myunggil Kang

Hui-Chul Yang

Myoung-Soo Park

Jeong-Won Ko

Kyung-Jun Lee

Hyun-Yeul Lee

Seung-Wook Nam

Dong-Oh Lee

Jun-Won Jung

Sang-Deuk Nam

A semiconductor device may include first and second channel patterns on a substrate, first and second source/drain patterns in contact respectively with the first and second channel patterns, and first and second gate electrodes respectively overlapping the first and second channel patterns. The first gate electrode may include a first segment between first and second semiconductor patterns of the first channel pattern. The first segment may include a first convex portion protruding toward the first source/drain pattern. The second gate electrode may include a second segment between third and fourth semiconductor patterns of the second channel pattern. The second segment may include a concave portion recessed toward a center of the second segment.

Semiconductor devices

A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction parallel to an upper surface of the substrate, a gate structure on the active pattern, the gate structure extending in a second direction parallel to the upper surface of the substrate and crossing the first direction, channels spaced apart from each other in a third direction perpendicular to the upper surface of the substrate, each of the channels extending through the gate structure, a source/drain layer on a portion of the active pattern adjacent the gate structure, the source/drain layer contacting the channels, and a sacrificial pattern on an upper surface of each of opposite edges of the portion of the active pattern in the second direction, the sacrificial pattern contacting a lower portion of a sidewall of the source/drain layer and including silicon-germanium.

A semiconductor device includes a first source/drain, a second source/drain isolated from direct contact with the first source/drain in a horizontal direction, a channel extending between the first source/drain and the second source/drain, a gate surrounding the channel, an upper inner spacer between the gate and the first source/drain and above the channel, and a lower inner spacer between the gate and the first source/drain and under the channel, in which the channel includes a base portion extending between the first source/drain and the second source/drain, an upper protrusion portion protruding upward from a top surface of the base portion, and a lower protrusion portion protruding downward from a bottom surface of the base portion, and a direction in which a top end of the upper protrusion portion is isolated from direct contact with a bottom end of the lower protrusion portion is oblique with respect to a vertical direction.

An integrated circuit includes a fin active region protruding from a substrate, a plurality of semiconductor patterns on an upper surface of the fin active region, a gate electrode that surrounds the plurality of semiconductor patterns and includes a main gate part on an uppermost one of the plurality of semiconductor patterns and sub gate parts between the plurality of semiconductor patterns, a spacer structure on a sidewall of the main gate part, and a source/drain region at a side of the gate electrode. The source/drain region is connected to the plurality of semiconductor patterns and contacts a bottom surface of the spacer structure. A top portion of the uppermost semiconductor pattern has a first width. A bottom portion of the uppermost semiconductor pattern has a second width smaller than the first width.

Integrated circuits and methods of manufacturing the same

An electronic device is provided. The electronic device includes a touchscreen, at least one processor electrically connected with the touchscreen, and a memory electrically connected with the processor. The memory may store instructions executed to enable the at least one processor to display a first window for running a first application and a second window for running a second application on the touchscreen, display a virtual keypad on a portion of the first window and a portion of the second window corresponding to a first input to a focused window of the first window and the second window, and vary a size of the virtual keypad corresponding to a second input to the virtual keypad.

Electronic device and method for controlling display in electronic device

Growing community of inventors

Bucheon-si, South Korea

Soojin Jeong