Samsung Electronics Co., Ltd.

Soojin Ann

Kihyun Kim

Chungki Lee

Sungik Jang

Dongguk Han

A memory device includes: a plurality of sense amplifier circuits sensing a data bit in response to a parallel test signal from a plurality of banks; a plurality of comparators comparing the data bit from each of the plurality of sense amplifier circuits with a test bit; and a logic circuit receiving output signals of the plurality of comparators and outputting a test result, wherein each of the plurality of comparators receives the test bit, an evolved parallel bit test (PBT) signal, at least one test ignore signal, and a test pass signal, and compares the data bit and the test bit in response to the evolved parallel bit test (PBT) signal, the at least one logic state test setting signal, and the test pass signal, and passes a corresponding bank regardless of a test operation in response to the test pass signal.

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Ansan-si, South Korea

Soojin Ann