Samsung Display Co., Ltd.

Sooim Jeong

Younggil Park

Jaebum Han

Nari Ahn

Junghwa Park

Moonsung Kim

Kihyun Kim

Juwon Lee

Ran Kim

Kinam Kim

Junghyun Cho

Hyun-Ju Lee

Haeyoung Yun

Sungchan Jo

Kiyoung Yeon

Junsu Park

Sungwook Woo

Wooyoung Lee

Dongyoun Yoo

Bohwa Kim

Yeonjoo Seo

Dahye Yoon

Hyunsup Yoon

Jungwoon Jung

Kyunglae Rho

Jaisun Kyoung

Gisuk Kwon

Heemin Yoo

Provided are a display apparatus with improved display quality and a method of manufacturing the same, the display apparatus including: a substrate including a first base layer, a second base layer arranged over the first base layer, and a first barrier layer disposed between the first base layer and the second base layer; a first thin-film transistor arranged over the substrate and including a first semiconductor layer and a first gate electrode, wherein the first barrier layer includes a first sub-layer and a second sub-layer disposed on the first sub-layer, the first sub-layer including an inorganic material and the second sub-layer including amorphous silicon and crystallized silicon.

Display apparatus and method of manufacturing the same

A display device includes: a first substrate including a first area, a second area surrounding the first area, and a third area surrounding the second area; a second substrate facing the first substrate; a sealing member between the first substrate and the second substrate at the third area; a color filter layer under the second substrate; a low refractive index layer under the color filter layer, overlapping with the first area, and spaced from the sealing member; a protective layer covering the low refractive index layer, surrounding a side surface of the low refractive index layer, and including an inorganic material; and a color conversion layer under the protective layer, overlapping with the first area, and including a plurality of color conversion parts spaced from each other.

Display device

A display panel includes the following elements: a substrate including a first base layer, wherein the first base layer includes a transparent polyimide resin; a first pixel circuit and a second pixel circuit over the substrate, spaced from each other with the transmission area between the first pixel circuit and the second pixel circuit, and each including transistors and a storage capacitor; a first display element electrically connected to the first pixel circuit; and a second display element electrically connected to the second pixel circuit.

Display panel having transmission area between pixel circuits and electronic apparatus including the same

A window includes a base layer and a hard coating layer on the base layer. The hard coating layer includes a first layer on the base layer and of a first thickness, and a second layer on the first layer and of a second thickness. The second layer includes an antistatic agent. The hard coating layer has a hardness reduction rate of 50 percent (%) or less expressed as follows. In the equation above, H is a hardness reduction rate (%) of a target layer, Dis a hardness reduction rate measured from the target layer at a temperature of 60 degrees Celsius (° C.) with a relative humidity of 93%, and Dis a hardness reduction rate measured from the target layer at a room temperature with a relative humidity of 30%.

Window, method of fabricating the same, and display device including the same

A display device includes: a substrate; a first insulating layer disposed on the substrate and that includes an inorganic insulating material; an oxide semiconductor layer disposed on the first insulating layer; a second insulating layer disposed on the oxide semiconductor layer and that includes an inorganic insulating material; and a third insulating layer disposed on a gate electrode disposed on the second insulating layer and that includes an inorganic insulating material. The oxide semiconductor layer includes a first conductive region, a second conductive region, and a channel region located between the first conductive region and the second conductive region, and a value in the channel region of the oxide semiconductor layer of HC according to equation (1) is less than 30%.

Display device and method of manufacturing display device

An embodiment of a display apparatus includes a substrate, a buffer layer on the substrate, a thin film transistor including a semiconductor layer disposed on the buffer layer and including a silicon semiconductor, and a gate electrode insulated from the semiconductor layer, and an insulating layer covering the semiconductor layer, in which a concentration of fluorine at an interface between the semiconductor layer and the buffer layer is at least 10% of a concentration of the fluorine at the interface between the semiconductor layer and the insulating layer.

Display apparatus having flourine at interfaces of semiconductor layer and manufacturing method thereof

A display apparatus is provided which may include a substrate including a display area and a non-display area adjacent to the display area, a first thin-film transistor disposed on the substrate and including a first semiconductor layer including an oxide semiconductor material, and a second thin-film transistor disposed on the substrate and including a second semiconductor layer including a silicon semiconductor material, wherein a surface roughness of the first semiconductor layer is increased by plasma treatment. A method of manufacturing the display apparatus is also provided.

A thin film transistor substrate includes a first semiconductor layer disposed on a substrate and having a first channel area, a first source area and a first drain area. A first gate electrode is disposed above the first semiconductor layer and overlaps the first channel area. A first electrode layer is disposed above the first gate electrode and electrically connects to at least one of the first source area and the first drain area. A second insulating layer is disposed between the first gate electrode and the first electrode layer. The second insulating layer includes an inorganic control layer and a first inorganic layer arranged on the inorganic control layer. The inorganic control layer has a lower density than a density of the first inorganic layer.

Thin film transistor substrate and display apparatus including the same

A display apparatus that includes a substrate, a first thin-film transistor and a second, thin-film transistor disposed on the substrate at different distances from a top surface of the substrate. A display device is electrically connected to the first thin-film transistor. The first thin-film transistor includes a first semiconductor layer in polycrystalline silicon and a first gate electrode that overlaps a channel region of the first semiconductor layer in a direction of a thickness of the substrate. The second thin-film transistor includes a second semiconductor layer including an oxide semiconductor. The first gate electrode has a stacked structure including a first layer and a second layer. The second layer includes titanium and the first layer includes a different material from the second layer.

Display apparatus

An organic light-emitting display apparatus includes a substrate; thin film transistors; a protective layer that includes a plurality of concave-convex units disposed in a pixel area; an organic light-emitting device disposed on the protective layer; and an encapsulation unit that covers the organic light-emitting device. Each of the concave-convex units protrudes from a surface of the protective layer. The organic light-emitting device includes a pixel electrode, an emission layer, and an opposite layer sequentially stacked on the concave-convex unit, and a distance between the pixel electrode and the opposite electrode is determined by 5%&#x2264;(a/b)&#x2264;18%, wherein 'a' is a vertical distance with respect to the surface of the protective layer between the pixel electrode and the opposite electrode and 'b' is a minimum distance between the pixel electrode and the opposite electrode.

Organic light-emitting display apparatus

A method of preparing a patterned cured product, the method including: providing a composition including a sol-gel reactive silicon-containing monomer, a polymerizable (meth)acryl monomer, a photoinitiator, and a fluorinating agent on a substrate to form a first layer on the substrate; contacting the first layer with a master mold to form a second layer including a pattern transferred by the master mold; and obtaining the patterned cured product from the second layer, wherein obtaining of the patterned cured product from the second layer includes a sol-gel reaction, a photocuring reaction, and a separating of the master mold.

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Yongin-si, South Korea

Sooim Jeong