Samsung Electronics Co., Ltd.

Soohun Hong

Heesoo Kang

Donghyun Kim

Heedon Jeong

Sanghyuk Hong

Jae Yup Chung

Dongho Cha

A semiconductor device includes a fin region with long and short sides, a first field insulating layer including a top surface lower than that of the fin region and adjacent to a side surface of the short side of the fin region, a second field insulating layer including a top surface lower than that of the fin region and adjacent to a side surface of the long side of the fin region, an etch barrier pattern on the first field insulating layer, a first gate on the fin region and the second field insulating layer to face a top surface of the fin region and side surfaces of the long sides of the fin region. A second gate is on the etch barrier pattern overlapping the first field insulating layer. A source/drain region is between the first gate and the second gate, in contact with the etch barrier pattern.

Semiconductor device including a three-dimensional channel

Semiconductor device

Method of fabricating semiconductor device including an etch barrier pattern

Field effect transistors are provided. An active region protrudes from a substrate and a gate electrode is provided on the active region. Source/drain regions are provided at both sides of the active region under the gate electrode, respectively. A width of a lower portion of the gate electrode is greater than a width of an upper portion of the gate electrode.

Field effect transistor

Semiconductor device and fabricating method thereof

Growing community of inventors

Gunpo-si, South Korea

Soohun Hong