Samsung Corning Precision Materials Co., Ltd.

Corning Precision Materials Co., Ltd.

SooHo Park

Sang Do Lee

Sang Jun Yim

Sang Ick Lee

Myong Woon Kim

Seung Ho Yoo

Hyung Soo Shin

Young Zo Yoo

SeoHyun Kim

GunSang Yoon

Jeongwoo Park

Taejung Park

Bogyeong Kim

Eun-Ho Choi

Joo Young Lee

Seo Hyun Kim

Gun Sang Yoon

YoungZo Yoo

JongSe Park

A zinc oxide (ZnO) precursor and a method of depositing a ZnO-based thin film using the same, with which a high-quality and high-purity ZnO-based thin film can be deposited. The ZnO precursor includes a mixture solvent containing at least two organic solvents which are mixed and a source material comprising diethyl zinc or dimethyl zinc which is diluted in the mixture solvent.

Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same

A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains a zincocene having the following formula or a derivative thereof: 

A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains an alkyl zinc halide having the following formula: R&#x2014;Zn&#x2014;X, where R is an alkyl group CH, and X is a halogen group. The n is a number ranging from 1 to 4, and the alkyl group is one selected from among a methyl group, an ethyl group, an i-propyl group and a t-butyl group. The halogen group contains one selected from among F, Br, Cl and I. A method of depositing a zinc oxide-based thin film includes loading a substrate into a deposition chamber; and supplying the zinc oxide precursor which contains the above-described alkyl zinc halide and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. The zinc oxide-based thin film is deposited on the substrate via atmospheric pressure chemical vapor deposition.

Zinc oxide precursor containing alkyl zinc halide and method of depositing zinc oxide-based thin film using the same

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SooHo Park