Samsung Electronics Co., Ltd.

Soobong Chang

Kyungryun Kim

Younghun Seo

A semiconductor memory device includes a memory cell that stores multi-bit data, and a bit line sense amplifier that is connected to a bit line of the memory cell and a complementary bit line corresponding to the memory cell in an open bit line structure. The bit line sense amplifier includes a first latch that sequentially senses a first bit and a second bit of the stored multi-bit data and transmits the sensed first bit to a second latch, and a second latch that senses the transmitted bit from the first latch.

Growing community of inventors

Incheon, South Korea

Soobong Chang