Ja Hwa Electronics Co., Ltd.

Other

Soo Young Yoon

Je Seung Yeon

Chul Soon Park

Hyeonik Cho

Jaeseon Lee

In Soo Kang

Jin Yong Jang

Hyun Churl Kim

An actuator for driving a reflector includes a movement frame including a reflector configured to reflect or refract light to a lens and a first magnet, a first support frame configured to provide a space of the movement frame to move, a first drive coil configured to generate an electromagnetic force in the first magnet to rotationally move the movement frame in a first direction based on the first support frame, a first rotation guide between the movement frame and the first support frame and having an arc shape so that the movement frame rotates in the first direction, and a first ball inside the first rotation guide, in which a center of curvature of the first rotation guide corresponds to a center of rotation of the reflector.

Actuator for driving reflector

An actuator for driving a reflector includes a movement frame, a first support frame, a first drive coil, a first rotation guide and a first ball. The movement frame includes a reflector configured to reflect or refract light to a lens and a first magnet. The first support frame is configured to provide a space of the movement frame to move. The first drive coil is configured to generate an electromagnetic force in the first magnet to rotationally move the movement frame in a first direction based on the first support frame. The first rotation guide is arranged between the movement frame and the first support frame and has an arc shape so that the movement frame rotates in the first direction. The first ball is arranged inside the first rotation guide, wherein a center of curvature of the first rotation guide corresponds to a center of rotation of the reflector.

The present invention relates to a method of crystallizing an amorphous silicon layer which is carried out by depositing a crystallization-inducing substance on an amorphous silicon layer on crystallizing the amorphous silicon layer by metal-induced crystallization whereby speed of crystallizing silicon is increased and metal contamination by MIC is reduced. The present invention includes the steps of depositing a crystallizing-induced layer of an induced substance for crystallizing silicon on an amorphous silicon layer wherein the crystallizing induced layer is formed to the thickness under 0.03 angstroms, and treating thermally the amorphous silicon layer on which the crystallizing-induced layer is deposited. In another aspect, the present invention includes the steps of forming a crystallizing-induced substance on an amorphous silicon layer wherein the crystallizing-induced substance has predetermined density on an unit area of the amorphous silicon layer, and treating thermally the amorphous silicon layer on which the crystallizing-induced substance is formed.

Method of crystallizing an amorphous silicon layer

Growing community of inventors

Cheongju-si, South Korea

Soo Young Yoon