Lg Display Co., Ltd.

Other

Lg Philips Lcd Co., Inc.

Soo-Young Yoon

Yong-Ho Jang

Jae-Young Oh

Nam-Wook Cho

Binn Kim

Jin Yong Jang

Seong-Jin Park

Woo-Sung Shon

Jin Hee Jang

Jong-Hyun Park

Choong-Keun Yoo

Juhn-Suk Yoo

Su-Hwan Moon

Jong-Kyun Lee

Dong-Sik Park

Soo-Hwan Moon

Hee-Seok Yang

Yoon-dong Cho

Mi-Jung Lee

Jae-kyung Choi

An organic light emitting diode display device includes a substrate; an antireflection layer on a first surface of the substrate and including a metallic layer and an insulating layer; a driving element portion on the antireflection layer and including thin film transistors and metallic lines; and an organic light emitting portion driven by the driving element portion.

Organic light emitting diode display device and method of manufacturing the same

A method of fabricating a thin film transistor substrate includes: forming a polymer layer on a glass substrate; forming a passivation layer on the polymer layer; forming a thin film transistor array on the passivation layer; and separating the glass substrate from the polymer layer by irradiating a laser from a rear surface of the glass substrate.

Method of fabricating thin film transistor substrate and organic light emitting display device using the same

A driving circuit for a flat panel display device includes a generation unit for generating n-phase form generation clocks; and a plurality of shift register stages for sequentially generating a plurality gate signals to a plurality of gate lines using the n-phase form generation clocks, one of the shift register stage including first and second output terminals for outputting first and second switching signals, respectively, using an output signal of one of the preceding shift register stages and an output signal of one of the subsequent shift register stages; a first transistor connected to the first output terminal for receiving one of the n-phase form generation clocks; and a second transistor connected to the second output terminal and the first transistor, wherein each gate line is connected to a node between the first and second transistors.

Driving circuit including shift register and flat panel display device using the same

A method for fabricating a flexible display device including the steps of preparing a glass substrate, forming a flexible substrate on the glass substrate, the flexible substrate being formed by forming a semiconductor layer on the glass substrate, forming a first flexible layer on the semiconductor layer, forming an adhesive layer on the first flexible layer, and forming a second flexible layer on the adhesive layer, forming a thin film array on the flexible substrate, forming a display device on the thin film array, and separating the glass substrate from the semiconductor layer of the flexible substrate.

Flexible substrate and method for fabricating flexible display device having the same

A liquid crystal display (LCD) device comprises a liquid crystal panel having a plurality of pixel regions defined by a plurality of gate lines and data lines, each pixel region associated with a thin film transistor, a gate driving unit having an amorphous semiconductor and integrally formed with the liquid crystal panel capable of sending a scan signal to the gate lines having a pulse width longer than a turned on time of the thin film transistor located within the pixel region, and a data driving unit connected to the data lines capable of sending an image signal to the data lines.

Liquid crystal display device

A driving circuit for a flat panel display device includes shift register stages, each containing: a first TFT charging a Q node according to a start signal; a second TFT discharging the Q node according to an output voltage of a next shift register stage; a pull-up unit increasing an output voltage according to the Q node voltage; an odd pull-down unit decreasing the output voltage in an odd frame according to a QB-o node voltage; and an even pull-down unit decreasing the output voltage in an even frame according to a QB-e node voltage. A gate and drain of a third odd TFT connected to the QB-o node are connected to each other and receive an odd source voltage. A gate and drain of the third even TFT connected to the QB-e node are connected to each other and receive an even source voltage.

A driving circuit for a flat panel display device includes first and second generation units generating m-phase circulation enable control clocks and n-phase circulation form generation clocks; and a plurality of shift register stages generating output signals by using the m-phase circulation enable control clocks and the n-phase circulation form generation clocks. Each shift register stage includes an input terminal receiving the m-phase circulation enable control clocks; first and second nodes outputting first and second signals, respectively, using the m-phase circulation enable control clocks; a first transistor connected to the first node and receiving the n-phase circulation form generation clocks; a second transistor connected to the second node and the first transistor; and an output terminal between the first and second transistors and outputting one of the output signals.

A shift register structure comprising a shift register for sequentially outputting voltages as a clock signal and a start voltage are inputted thereto, and a cleaner means connected to the shift register for removing noise within the start voltage. The cleaner means is a transistor for inputting a clock signal to a gate and for inputting a signal outputted from the shift register to a source.

Shift register without noise and liquid crystal display device having the same

The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.

Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof

The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using of electric fields and plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer while applying an electric field to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, an electric field generating means in the chamber wherein the electric field generating means applies electric field to the substrate, and a heater at the substrate support wherein the heater supplies the substrate with heat.

A method of crystallizing an amorphous film includes the steps of forming an amorphous film capable of being crystallized on a substrate, the amorphous film being in contact with a metal layer; and crystallizing the amorphous film by forming an electric field in the amorphous film and the metal layer, while simultaneously subjecting the amorphous film and the metal layer to a thermal treatment, thereby crystallizing the amorphous film.

Method of crystallizing an amorphous film

A method for crystallizing an amorphous layer into a polycrystalline layer. The method uses a substrate under the amorphous layer and a nickel film on the amorphous layer, which are subjected to a heat treatment. The nickel film is formed by a coating step that uses a nickel-containing solution. Alternatively, a nickel and gold, or a nickel and palladium, solution can be used. The method eliminates contamination with metal in the polycrystalline silicon layer and reduces its growth temperature.

Growing community of inventors

Gyeonggi-do, South Korea

Soo-Young Yoon