Samsung Electronics Co., Ltd.

Soo-Yeon Jeong

Myeong-Cheol Kim

Tae-Jong Lee

Dong-Gu Yi

Jae-Po Lim

Do-hyoung Kim

Do-Haing Lee

Nam-Myun Cho

Hyung-yong Kim

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device comprises a first fin type active pattern formed on a substrate and extending in a first direction and including first to third parts. At least one dimension of the third part measuring less than the corresponding dimension of the first part. A gate electrode extending in a second direction different from the first direction is at least partially formed on the first part of the fin type active pattern. A first source/drain is formed on the third part of the fin type active pattern.

Semiconductor device and method for fabricating the same

A method of manufacturing a semiconductor device includes forming a gate structure through a first insulating interlayer on a substrate such that the gate structure includes a spacer on a sidewall thereof, forming a first hard mask on the gate structure, partially removing the first insulating interlayer using the first hard mask as an etching mask to form a first contact hole such that the first contact hole exposes a top surface of the substrate, forming a metal silicide pattern on the top surface of the substrate exposed by the first contact hole, and forming a plug electrically connected to the metal silicide pattern.

Semiconductor device

In a method of fabricating a semiconductor device, a target layer and a first material layer are sequentially formed on a substrate. A plurality of second material layer patterns are formed on the first material layer, the second material layer patterns extending in a first horizontal direction. A plurality of hardmask patterns extending in a second horizontal direction are formed on the plurality of second material layer patterns and the first material layer, wherein the second horizontal direction is different from the first horizontal direction. A first material layer pattern is formed by etching the first material layer using the plurality of hardmask patterns and the plurality of second material layer patterns as etch masks. A target layer pattern with a plurality of holes is formed by etching the target layer using the first material layer pattern as an etch mask.

Method of fabricating semiconductor device

Methods of manufacturing a semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Soo-Yeon Jeong