Samsung Electronics Co., Ltd.

Soo-Woong Lee

Sang Soo Park

Jae-Yong Jeong

Kyung-Min Kim

Hyun-Jin Kim

Hyung-Gon Kim

Yongkyu Lee

Youn-yeol Lee

Yo-Han Ahn

Sun-Yong Lee

Youn-Soo Cheon

Hee-Sun Chae

Jung-Sung Hwang

Kun-Hyung Lee

Jae-Hyung Jung

Sangchul Kang

Hyeog-Ki Kim

Seokcheon Kwon

Hyun-Ho Cho

Sang-Ryong Park

Hyuk-Jun Yoo

Doo-Ho Cho

Jiwoong Kwon

Ju-Jin An

Ki-Doo Kim

A storage device includes a memory and a memory controller which transmits a command to the memory. The memory includes at least one memory cell array, a memory temperature sensor which measures a temperature of the memory, and a control logic. The control logic outputs a busy signal in response to the command, receives the temperature of the memory from the memory temperature sensor in response to the command, and determines whether to perform a command operation according to the command on the memory cell array based on the received temperature of the memory.

Storage device which controls memory according to temperature, and method of controlling the same

Disclosed is a nonvolatile memory device, which includes a memory cell array that includes a plurality of memory cells, a page buffer circuit that is connected with the memory cell array through a plurality of bit lines and performs a sensing operation of sensing memory cells selected from the plurality of memory cells through the plurality of bit lines during a sensing time, an input/output circuit that performs a data output operation of outputting data from the page buffer circuit to an external device through data lines, and a sensing time control circuit that adjusts the sensing time when the data output operation is performed during the sensing time.

Nonvolatile memory device including sensing time control circuit and operating method thereof

A non-volatile memory device includes a memory cell array including a plurality of memory cells, a page buffer circuit, and a control logic circuit. The page buffer circuit includes a plurality of first page buffers and a plurality of second page buffers, each including a sense latch, a data latch, and a cache latch. The sense latch senses data stored in the memory cell array and dumps the sensed data to the data latch, the data latch dumps the data dumped by the sense latch to the cache latch, and the cache latch transmits the data dumped by the data latch to a data I/O circuit. While the cache latch included in at least one of the plurality of first page buffers is performing a data transmit operation, the data latch included in at least one of the plurality of second page buffers performs a data dumping operation.

Non-volatile memory device and operation method of the same

A mobile device includes a slave device that receives first data provided to a serial data line in synchronization with a clock signal provided through a serial clock line, and outputs second data to the serial data line in synchronization with the clock signal; and a master device that generates the clock signal and provides the first data to the serial data line in synchronization with the generated clock signal, or receives the second data output to the serial data line in synchronization with the clock signal. The master device generates the clock signal of a first frequency upon transmitting the first data, and generates the clock signal of a second frequency, which is lower than the first frequency, upon receiving the second data.

Mobile device and interfacing method thereof that adjusts clock frequency based on access mode

A non-volatile memory device includes a non-volatile memory cell array including a plurality of word lines, a voltage generator configured to generate a first high-voltage using a supply voltage and a second high-voltage using an external voltage which is higher than the supply voltage, and a word line selection circuit configured. The word line selection circuit is configured apply, during a program operation of the memory cell array, the first high-voltage to a selected word line among the plurality of word lines, and the second high-voltage to unselected word lines among the plurality of word lines.

Nonvolatile memory device, memory system including the same, and method of operating nonvolatile memory device

A non-volatile memory device may include a memory cell array, a page buffer, a column decoder, a column selection circuit and a repair circuit. The memory cell array includes normal memory cells and redundancy memory cells. In one example, the page buffer may load normal data and redundancy data from the memory cell array. The column decoder may generate a normal column selection signal and a redundancy column selection signal in response to a column address. The column selection circuit may select the normal data and redundancy data in response to the normal column selection signal and redundancy column selection signal. The repair circuit may then output one of the normal data and redundancy data.

Non-volatile memory device and non-volatile memory system having the same

An apparatus and method for manufacturing semiconductor devices are disclosed. In accordance with the invention, a wafer transfer device for transferring wafers from wafer storage containers to wafer processing equipment includes a flow chamber designed to reduce the amount of contaminants that can enter the wafer container. The wafer transfer apparatus provide two gas inlets for allowing two gases to flow through the flow chamber of the transfer apparatus. This results in a reduced amount of contaminants able to enter the wafer container, which in turn results in manufacture of devices with more reliable performance characteristics as well as high manufacturing yield.

Apparatus and method for processing wafers

A method of forming patterns in a semiconductor device comprises: forming a conductive film on a substrate; forming an anti-reflective layer on the conductive film; cleaning oxide residues on the anti-reflective layer using a first cleaning solution; cleaning the oxide residues on the anti-reflective layer using a second cleaning solution; forming a photoresist pattern on the anti-reflective layer; and patterning the conductive film using the photoresist pattern.

Method for manufacturing a semiconductor device

A substrate processing apparatus for processing substrates prevents the substrates from contaminating as they are transferred. The apparatus includes a container, like a FOUP, for containing substrates, at least one processing chamber where the substrates are processed, a substrate transferring module including a substrate transfer chamber and at least one load port for supporting a container, and a contamination controlling system for the substrate transfer chamber. The contamination controlling system includes a purge gas supply inlet connected to the substrate transfer chamber, and a gas circulating tube for recycling the purging gas to circulate through the chamber. The substrate transfer chamber is purged using the purging gas to remove moisture and contaminating materials from the substrate transfer chamber. The formation of particles on the substrate otherwise caused by a reaction between the moisture and contaminating materials while the substrate is standing by in the container can be prevented.

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Seoul, South Korea

Soo-Woong Lee