Skhynix Inc.

Soo Nam Jung

Sung Lae Oh

Dong Hyuk Kim

Tae Sung Park

Sang Hyun Sung

Go Hyun Lee

Chang Man Son

Yong Kim

Sang Woo Park

Chang Woon Choi

Yeong Taek Lee

A semiconductor device includes a first connection pattern; a bit line disposed over the first connection pattern in a vertical direction; and a bit-line contact pad, disposed in a first layer between the bit line and the first connection pattern to electrically couple the bit line to the first connection pattern, and formed as an island when viewed along the vertical direction. A predetermined number of the bit-line contact pads are spaced apart from each other by a predetermined distance in a first direction, when viewed along the vertical direction.

Semiconductor device

A unit page buffer block includes first to fourth page buffer pairs. Each of the page buffer pairs includes a common column decoder block; and an upper page buffer stage and a lower page buffer stage electrically and commonly connected to the common column decoder block. Each of the upper page buffer stages includes an upper selection block; an upper latch block; and an upper cache block. Each of the lower page buffer stage includes a lower selection block; a lower latch block; and a lower cache block. Each of the upper selection blocks includes first to fourth sub-selection blocks. Each of the upper and lower latch blocks includes first to twelfth upper sub-latch blocks. Each of the upper and lower cache blocks includes first to twelfth upper sub-cache blocks. Each of the common column decoder block includes first to third sub-common column decoder blocks arranged in a row direction.

Semiconductor memory device including unit page buffer blocks having four page buffer pairs

A semiconductor device is disclosed, which relates to a three-dimensional (3D) semiconductor memory device. The semiconductor device includes a first connection pattern, a bit line disposed over the first connection pattern in a vertical direction, and a bit-line contact pad, disposed in a first layer between the bit line and the first connection pattern to electrically couple the bit line to the first connection pattern so that the bit-line contact pad, and formed as an island when viewed along the vertical direction.

A method for manufacturing a semiconductor memory device may include: forming a pre-stack by alternately stacking a plurality of first dielectric layers and a plurality of second dielectric layers over a substrate which has a cell area and a connection area; forming a plurality of slits which pass through the pre-stack, such that a distance between the slits in the connection area is larger than a distance between the slits in the cell area; removing the second dielectric layers in the cell area and in a periphery of the connection area adjacent to the slits while leaving the second dielectric layer in a center of the connection area by injecting an etching solution for removing the second dielectric layers, through the slits; and forming electrode layers in spaces from which the second dielectric layers are removed.

Semiconductor memory device and manufacturing method thereof

A semiconductor memory device includes an electrode structure including a plurality of electrode layers and a plurality of interlayer dielectric layers which are alternately stacked on a substrate defined with a plurality of cell areas and a plurality of coupling areas in a first direction; a hard mask pattern disposed on the electrode structure, and having a plurality of opening holes in the coupling areas; and a plurality of contact holes defined in the electrode structure under the plurality of opening holes, and exposing pad areas of the electrode layers, respectively. The plurality of opening holes are disposed by being distributed in a plurality of rows arranged in a second direction intersecting with the first direction.

Semiconductor memory device having three-dimensional structure and method for manufacturing the same

A semiconductor memory device includes a stack disposed over a first substrate; an etch barrier including a plurality of dummy channels which pass through the stack and surround a coupling region; and a plurality of channels passing through the stack in a cell region outside the coupling region. The stack has a structure in which first dielectric layers and second dielectric layers are alternately stacked, inside the coupling region, and has a structure in which the first dielectric layers and electrode layers are alternately stacked, outside the coupling region.

A semiconductor device including a page buffer is disclosed, which reduces the number of lines of the page buffer. The semiconductor device includes a plurality of bit lines, classified into a first group and a second group, that are arranged alternating, a first page buffer circuit coupled to the plurality of bit lines and a plurality of connection lines corresponding to the plurality of bit lines, and a second page buffer circuit coupled to the plurality of connection lines. Each of the first group and the second group includes a plurality of bit-line pairs classified into odd bit lines and even bit lines. The plurality of connection lines includes odd connection lines and even connection lines, and odd connection lines corresponding to the odd bit lines are arranged contiguous to each other, and even connection lines corresponding to the even bit lines are arranged contiguous to each other.

Semiconductor device including page buffer

A semiconductor memory device includes a memory cell; and a page buffer including a sensing circuit that is coupled to the memory cell through a bit line. The page buffer includes a first transistor included in the sensing circuit; and a second transistor not included in the sensing circuit. A cross-sectional dimension of a first contact which is coupled to the first transistor and a cross-sectional dimension of a second contact which is coupled to the second transistor are different from each other. The cross-sectional dimension of the second contact is smaller than the cross-sectional dimension of the first contact.

Semiconductor memory device including page buffers

A semiconductor memory device may include a memory cell array; and a cache latch circuit that exchanges data with the memory cell array through a plurality of bit lines extended in a second direction crossing a first direction. The memory cell array may include a plurality of cache latches arranged in a plurality of columns in the first direction and in a plurality of rows in the second direction. Each of the cache latches may be coupled to any one of a plurality of input/output (IO) pins. Cache latches coupled to the IO pins at the same time may constitute one IO cache latch unit. The cache latches included in the one IO cache latch unit may be arranged in 2&#xd7;2 array units.

Semiconductor memory device with cache latches

A semiconductor memory device includes a memory cell array; a page buffer circuit including a plurality of page buffers which are coupled to the memory cell array through a plurality of bit lines which extend in a second direction intersecting with a first direction; and a cache latch circuit including a plurality of cache latches which are coupled to the plurality of page buffers. The plurality of cache latches have a two-dimensional arrangement in the first direction and the second direction. Among the plurality of cache latches, an even cache latch and an odd cache latch which share a data line and an inverted data line are disposed adjacent to each other in the first direction.

Semiconductor memory device including cache latch circuit

A semiconductor memory device includes a plurality of page buffers defined in active regions of a substrate; and a plurality of wiring lines disposed over the page buffers, and coupled to the page buffers through contacts. The plurality of wiring lines may include contact portions which are coupled with the contacts, respectively. The plurality of wiring lines may be configured into a bent shape such that the contact portions are offset toward center lines of the active regions.

A semiconductor memory device includes a stack disposed over a substrate defined with cell and connection areas; channel structures passing through the stack in the cell area; and slits defined in the stack. The stack includes first dielectric layers separately staked in the cell and connection areas; electrode layers disposed alternately with the first dielectric layers in the cell area and a periphery of the connection area adjacent to the slits; and second dielectric layers disposed alternately with the first dielectric layers in a central part of the connection area distant from the slits. A distance between the slits in the connection area is larger than a distance between the slits in the cell area, and, at a boundary between the periphery and the central part of the connection area, the electrode layers and the second dielectric layers disposed at the same layers are in contact with each other.

A semiconductor memory device includes a memory cell array; and a page buffer circuit coupled to the memory cell array through a plurality of bit lines which extend in a second direction intersecting with a first direction. The page buffer circuit includes a plurality of bit line select transistors coupled to the plurality of bit lines; a plurality of latches coupled to the plurality of bit line select transistors, respectively; and a plurality of erase bias pass transistors coupled to the plurality of bit lines, and configured to transfer an erase voltage to the bit lines. The plurality of erase bias pass transistors and the plurality of bit line select transistors are disposed in different regions, and are not adjacent to each other.

A semiconductor memory device may include: a memory cell array having a plurality of memory cells, a plurality of word lines and a plurality of bit lines; a page buffer block including N number of sub page buffer blocks which are arranged in a bit line direction and each of which includes a plurality of page buffers arranged in a word line direction and a bit line direction; common internal data lines respectively corresponding to the sub page buffer blocks; and a page buffer decoder including page buffer selection units which are electrically coupled between the page buffers included in each sub page buffer block and a common internal data line corresponding to the sub page buffer block and which electrically couple the page buffers included in the sub page buffer block selectively to the common internal data line.

Semiconductor memory device

A three-dimensional (3D) non-volatile semiconductor memory device including a U-shaped channel structure is disclosed. The 3D non-volatile semiconductor memory device includes a pipe gate, an upper pipe channel disposed in the pipe gate at a first depth, a first lower pipe channel disposed in the pipe gate at a second depth different from the first depth, and neighboring the upper pipe channel in a first direction, and a second lower pipe channel disposed in the pipe gate at the second depth, and neighboring the upper pipe channel in a second direction perpendicular to the first direction, wherein the upper pipe channel and the lower pipe channels have the same length.

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Seoul, South Korea

Soo Nam Jung