Samsung Electro-mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Lg Innotek Co., Ltd.

Samsung Led Co., Ltd.

Sk Chemicals Co., Ltd.

Hyundai Motor Company

Kia Corporation

Yonsei University

The University of Tokushima

Soo Min Lee

Hun Joo Hahm

Cheol Kyu Kim

Masayoshi Koike

Young Ho Park

In Eung Kim

Sung Hwan Jang

Dong Joon Kim

Je Won Kim

Sun Woon Kim

Cheol Soo Sone

Jong Bae Shin

Jae Hun Jeong

Tae Hyung Kim

In Hee Cho

Hee Seok Park

Jong In Yang

Yung Ho Ryu

Won Keun Cho

Jae Woong Han

Seung Jin Yoo

Hyun Jin Jo

Seong Suk Lee

Jeong Seok Na

Rak Jun Choi

Jaeun Yoo

So Young Lee

Woo Young Lee

Hyun Soo Kim

Min Hee Lee

Eun Jin Kim

Jeong Tak Oh

Jeong Han Kim

Dong Gu Kim

Si Hyuk Lee

Il Seon Yoo

Myeong Jeong Kim

Jina Lee

Se Young Park

Jang Hyeon Lee

Sung Hoon Park

Hoe Chul Jung

Yeo-Jin Park

Dae Sung Kwon

Sang A Ju

Yu Won Lee

Hyun Sook Lee

Ki Ho Park

Bong Yong Lee

Tae Ho Jeong

Key An Um

Hun Jae Chung

Gwui Youn Park

Hunseung Yoo

Sakai Shiro

Jin Kyo Jeong

Sanga Ju

Ji Na Lee

Naoi Yoshiki

Hae Won Yoon

Ki Hwan Seong

Jae Sun Kim

Namho Kim

Oleg Ledyaev

Eun Jeong Kim

Eui Sun Park

Seon Mi Kim

Hyo Won Suh

Jong-su Yoo

Wonjae Choi

Sung-Hyuk Kim

Young-me Lee

A circuit board including a first insulating layer; a first circuit pattern disposed on the first insulating layer; and a second insulating layer disposed on the first insulating layer and including a cavity. An upper surface of the first insulating layer includes a first region that does not vertically overlap the cavity; a second region vertically overlapping the cavity; and a boundary region between the first region and the second region. The first circuit pattern includes a first-first circuit pattern disposed on the boundary region of the first insulating layer. The first-first circuit pattern includes a first portion that does not vertically overlap the cavity, and a second portion connected to the first portion and vertically overlapping the cavity. A thickness of the first portion of the first-first circuit pattern is different from a thickness of the second portion of the first-first circuit pattern.

Circuit board

A printed circuit board according to an embodiment comprises: a first insulation layer; a first circuit pattern disposed on one surface of the first insulation layer and including a pad; and a second insulation layer disposed on one surface of the first insulation layer and including a cavity exposing the pad, wherein the first circuit pattern includes a 1-1 metal layer disposed on one surface of the first insulation layer, and a 1-2 metal layer disposed on one surface of the 1-1 metal layer, wherein the area of the 1-1 metal layer is greater than the area of the 1-2 metal layer, and at least a portion of a side surface of the 1-1 metal layer is exposed through the cavity.

The present invention relates to a patch comprising a high content of rivastigmine per unit area, which can be continuously administered for a long time. The rivastigmine patch according to the present invention is capable of continuous release of rivastigmine for a long period of time, preferably 3 days, more preferably 4 days or more after attachment, and has excellent physical and chemical stability.

Rivastigmine patch for long-term administration

A printed circuit board according to an embodiment includes a first insulating layer, a second insulating layer disposed on the first insulating layer and including a cavity; and a pad disposed on the first insulating layer and having an upper surface exposed through the cavity; wherein the cavity includes a first part including a first inner wall; and a second part including a second inner wall under the first part; and wherein an inclination angle of the first inner wall is different from an inclination angle of the second inner wall.

Printed circuit board

Disclosed herein is a method for manufacturing a hydrogen sensor, the method comprising the steps of: disposing a thin film made of a transition metal or an alloy thereof on a surface of elastic substrate; applying a tensile force in a repetitive manner to the elastic substrate to form a nanocrack on the thin film disposed on the surface of the elastic substrate; and injecting hydrogen gas into the formed nanocrack and then removing the hydrogen gas to form a nanogap, wherein the tensile force in the step of forming a nanocrack is applied to an extent that the elastic substrate has a tensile strain of 25% to 100%.

Hydrogen sensor and hydrogen sensor manufacturing method

A semiconductor device includes a gate signal generator to receive a first clock signal and to generate a first gate signal and a second gate signal based on the first clock signal; a gating clock signal generator to receive a second clock signal and to generate a first gating clock signal, a second gating clock signal and a third gating clock signal based on the first and second gate signals from the gate signal generator and the second clock signal; a data sampler to receive a third clock signal from the gating clock signal generator and to sample an input serial data signal based on the third clock signal; and a deserializer to generate a parallel data signal by deserializing the input serial data signal based on at least one of the first, second, and third gating clock signals from the gating clock signal generator.

Semiconductor device, semiconductor system, and method of operating the semiconductor device

A pressure sensor comprises: a first electrode layer; a second electrode layer; and an intermediate layer disposed between the first electrode layer and the second electrode layer, wherein the intermediate layer changes in resistance, depending on a change in at least one of a thickness or a volume thereof. In addition, the intermediate layer comprises: a foam having porous regions dispersed in a non-porous region thereof; and a conductive material being dispersed in the foam and being more conductive than the foam.

Pressure sensor having conductive material extending between non-porous and porous regions and pressure sensing device comprising same

Disclosed in an embodiment is a pressure detection sensor comprising: an elastic layer including a hole; and an electrode layer including a plurality of electrodes arranged on the elastic layer so as to be spaced apart, wherein the elastic layer includes a variable member arranged in the hole, the plurality of electrodes are electrically connected to each other by outside pressure, and at least one of the plurality of electrodes covers a part of the hole.

Pressure detection sensor and pressure detection insole including same

A signal amplifier includes a first amplifier, a second amplifier, and an output. The first amplifier amplifies a first input signal to form a first amplified output signal. The first input signal has a common mode voltage in a first voltage range, and the first amplified output signal has a common mode voltage in a second voltage range different from the first voltage range. The second amplifier amplifies a second input signal to form a second amplified output signal. The first input signal has the common mode voltage in the second voltage range and the second amplified output signal has the common mode voltage in the second voltage range. The output outputs the first amplified output signal or the second amplified output signal as an amplified output signal.

Signal amplifier, signal receiving circuit including the same, and device including the same

Embodiments provide a lighting apparatus including a light source unit including a first light source and a second light source, a light source driving unit including a first driver configured to supply first supply current to the first light source and a second driver configured to supply second supply current to the second light source, and a controller configured to control the first driver so as to vary the level of the first supply current and to control the second driver so as to fix the level of the second supply current.

Lighting apparatus

Disclosed are compounds useful as gonadotrophin-releasing hormone ('GnRH') receptor antagonist.

Gonadotropin releasing hormone receptor antagonist, preparation method thereof and pharmaceutical composition comprising the same

There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

Nitride semiconductor device

A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 &#x3bc;m. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.

Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same

There is provided a nitride semiconductor light emitting device. A nitride semiconductor light emitting device according to an aspect of the invention may include: an n-type nitride semiconductor layer provided on a substrate; an active layer provided on the n-type nitride semiconductor layer, and including quantum barrier layers and quantum well layers; and a p-type nitride semiconductor layer provided on the active layer, wherein each of the quantum barrier layers includes a plurality of InGaN layers (0&#x3c;x&#x3c;1) and at least one AlGaN layer (0&#x2266;y&#x3c;1), and the AlGaN layer is stacked between the InGaN layers.

Nitride semiconductor light emitting device

In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.

Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device

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Seoul, South Korea

Soo Min Lee