Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Samsung Sdi Co., Inc.

Soo Kyung Kwon

Eun Joo Jang

Yong Wook Kim

Seon-Yeong Kim

Ji-Yeong Kim

Sungwoo Hwang

Jihyun Min

Hyo Sook Jang

Shin Ae Jun

Won Joo Lee

Yuho Won

Hyun A Kang

Shang Hyeun Park

Nayoun Won

Garam Park

Yongwook Kim

Oul Cho

Yong Seok Han

In Taek Han

Taek Hoon Kim

Chul Ho Jung

Tae Gon Kim

Jooyeon Ahn

Jaeyong Lee

Seonmyeong Choi

A quantum dot includes: a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a dopant, wherein the first semiconductor nanocrystal includes a Group III-V compound, the second semiconductor nanocrystal includes zinc (Zn), sulfur (S), and selenium, and the dopant includes lithium, a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn, a Group 3A element having an effective ionic radius less than an effective ionic radius of Zn, or a combination thereof. Also a method of producing the quantum dot, and a composite, and an electronic device including the quantum dot.

Quantum dots and devices including the same

A display panel includes a light emitting panel and a color conversion panel. The color conversion layer emits a predetermined light. A color of the predetermined light comprises a first region of Cx of about 0.26 to about 0.35 and Cy of about 0.27 to about 0.35 in CIE 1931 color coordinates, and in an emission spectrum of the predetermined light having a color in the first region, a first area percentage is less than or equal to about 65%, where the first area percentage is defined by the following formula: [A/B]×100%, in which A denotes an area of a region having a wavelength of less than or equal to about 470 nm in the emission spectrum, and B denotes an area of a region having a wavelength of less than or equal to about 480 nm in the emission spectrum.

Display panel, production method thereof, and display device including the same

A display panel, including a light emitting panel including at least first and second light emitting units; and a color conversion panel including a surface opposite a surface of the light emitting panel and a color conversion layer including a first and second color conversion region and a partition wall defining the first and second color conversion region, wherein the first and second light emitting units are configured to provide the first color conversion region and the second color conversion region, respectively, with high energy incident light, wherein the first color conversion region includes a first semiconductor nanoparticle-polymer composite including a first polymer matrix including a polymer including a unit having a carboxyl group or an anion form of a carboxyl group, and further including, dispersed in the polymer matrix, first semiconductor nanoparticles an additional metal substance including a group IIB metal, a group IIIA metal, or a combination thereof.

Display panel and electronic device including the same

A cadmium free quantum dot including a core that includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell that is disposed on the core and includes a zinc chalcogenide, wherein the quantum dot further includes magnesium and the mole ratio of Te:Se is greater than or equal to about 0.1:1 in the quantum dot; a production method thereof; and an electronic device including the same.

Quantum dot, production method thereof, and electronic device including the same

Provided is a quantum dot having a core-shell structure, wherein a core includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell is disposed on the core and includes a Group II-VI compound, wherein the quantum dot further includes phosphorus and fluorine, and the quantum dot does not include cadmium.

A cadmium free quantum dot or a population thereof or a device including the same, wherein the cadmium free quantum dot includes a core (or a semiconductor nanocrystal particle) including a first semiconductor including a Group IIB-VI compound and a shell (or a coating) disposed on the core (or the semiconductor nanocrystal particle) including a Group IIB-V compound and exhibits a quantum efficiency of about 60% or higher.

Quantum dots and device including the same

A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.

Quantum dots, and electronic devices and electronic equipments including same

A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.

Cadmium free quantum dot including lithium, production method thereof, and electronic device including the same

A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

Quantum dots, production method thereof, and composite and electronic device including the same

A display device includes a display panel, a backlight unit, and a light conversion sheet between the display panel and the backlight unit. The backlight unit includes a substrate and light-emitting sections arranged on the substrate, one or more light sources are disposed in each of the light-emitting sections, the light conversion sheet includes first partition walls and light conversion sections arranged to correspond to the light-emitting sections, a first partition wall of the first partition walls is disposed between adjacent light conversion sections of the light conversion sections. Each of the light conversion sections includes first quantum dots emitting a first light and second quantum dots emitting a second light having a color different from a color of the first light, and the at least one light source provides light of a predetermined wavelength to the light conversion sheet.

Display device

A quantum dot including a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, and selenium, sulfur, or a combination thereof, wherein the quantum dot does not include cadmium, a mole ratio of tellurium relative to selenium in the first semiconductor nanocrystal is greater than about 1:1, a mole ratio of a sum of selenium and sulfur relative to in the quantum dot is greater than about 1:1, a wavelength of a maximum emission peak of the quantum dot is in a range of about 500 nanometers (nm) to about 550 nm, and the quantum dot has quantum efficiency (QY) of greater than or equal to about 30%, a quantum dot-polymer composite including the quantum dot, a display device including the quantum dot-polymer composite, and an electroluminescent device including the quantum dot.

Core shell quantum dot, production method thereof, and electronic device including the same

A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same. The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.

Quantum dots, a composition or composite including the same, and an electronic device including the same

A quantum dot composite that includes a matrix; and

Quantum dot composite, quantum dot, device including the same

A core-shell quantum dot comprising zinc, a core comprising a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core, wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum.

Zinc tellurium selenium based quantum dot

A quantum dot comprising zinc, tellurium, and selenium and not comprising cadmium, wherein a maximum luminescent peak of the quantum dot is present in a wavelength range of greater than about 470 nanometers (nm) and a quantum efficiency of the quantum dot is greater than or equal to about 10%, and wherein the quantum dot comprises a core comprising a first semiconductor nanocrystal and a semiconductor nanocrystal shell disposed on the core.

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Suwon-si, South Korea

Soo Kyung Kwon