Semicon Light Co., Ltd.

Lumens Co., Ltd.

Soo Kun Jeon

Eun Hyun Park

Geun Mo Jin

Kyoung Min Kim

Seung Ho Baek

Dong So Jung

Jun Chun Park

Il Gyun Choi

Bong Hwan Kim

Yeon Ho Jeong

Da Rae Lee

Yong Deok Kim

Jong Won Kim

Tea Jin Kim

Tae Hyun Kim

Won Jae Choi

Sung Chan Lee

Sung Gi Lee

Gye Oul Jeong

Hye Ji Rhee

Dae Soo Soul

Ki Man Park

Young Kwan Cho

Kyeong Jea Woo

Byeong Seob Kim

Young Un Gil

Geon Il Hong

Eung Suk Park

The disclosure relates to a semiconductor light emitting device from which a growth substrate is removed, comprising: a semiconductor light emitting diode including a first semiconductor layer having a first conductivity, an active layer for generating light by electron-hole recombination, and a second semiconductor layer having a second conductivity different from the first conductivity, in which the first semiconductor layer is formed in a direction where the growth substrate is removed; a metal layer formed on the second semiconductor layer; and an insulating layer for covering lateral faces of the semiconductor light emitting diode and lateral faces of the metal layer, and a manufacturing method for such a semiconductor light emitting device.

Semiconductor light-emitting device and manufacturing method therefor

The present disclosure relates to a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: one or more light emitting units, each including a first semiconductor layer, an active layer and a second semiconductor layer sequentially formed on a growth substrate; an electrode unit including a first semiconductor layer having a first conductivity and a metal layer formed on the first semiconductor layer; and one or more bonding layers for electrically connecting to the light emitting units and electrode unit, respectively, wherein each bonding layer has a first region on which the light emitting units and the electrode unit are arranged, and a second region having a larger planar area than that of the first region and being electrically connected to an external substrate.

Semiconductor light emitting device and method for manufacturing the same

The present disclosure relate to a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a semiconductor light emitting chip, and first electrodes electrically connected to the semiconductor light emitting chip, with the first electrodes each having a planar area larger than that of the semiconductor light emitting chip, wherein lower surfaces of the first electrodes are exposed externally, and an insulating material is filled in-between inner lateral surfaces of the first electrodes.

Semiconductor light emitting device and method of manufacturing the same

Disclosed is a semiconductor light emitting device comprising: a substrate; a first semiconductor layer, which is provided on the substrate and has a first conductivity; an active layer, which is provided on the first semiconductor layer and generates ultraviolet light by electron-hole recombination; a second semiconductor layer, which is provided on the active layer and has a second conductivity different from the first conductivity; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a second region that includes a plurality of protruded parts of the active layer and the second semiconductor layer protruded from the first semiconductor layer as seen in cross-sectional view and recesses between the protruded parts; and a first region surrounding the second region.

Disclosed is a semiconductor light emitting device characterized by being a flip chip including: a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination; an insulating layer, which is formed on the plurality of semiconductor layers and has openings; and an electrode formed on the insulating layer and electrically connected to the plurality of semiconductor layers through the opening, wherein the electrode has a top face and a bottom face, with the top face having a smaller area than the bottom face.

Semiconductor light-emitting element

Disclosed is a semiconductor light emitting device including: a body with a bottom part having at least one hole formed therein; a semiconductor light emitting device chip to be placed in each of the at least one hole, with the semiconductor light emitting device chip being comprised of a plurality of semiconductor layers including an active layer for generating light by electron-hole recombination, and an electrode electrically connected to the plurality of semiconductor layers; and an encapsulating member for covering the semiconductor light emitting device chip, wherein a hole&#x2014;defining inner face of the bottom part has a plurality of angles of inclination.

Semiconductor light-emitting element and manufacturing method therefor

Disclosed is a method for manufacturing a semiconductor light emitting device, the method including: providing a mask having a plurality of openings on a base; placing semiconductor light emitting chips on exposed portions of the base through the openings, respectively, by a device carrier which recognizes a shape of the mask and calibrates position for a semiconductor light emitting chip to be seated; and supplying an encapsulant to each of the openings, with the mask serving as a dam.

Method for manufacturing semiconductor light emitting device

Method for manufacturing semiconductor light-emitting device

The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating a light with a first wavelength via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a phosphor part provided over the first semiconductor layer on the side of the growth substrate, converting the light with the first wavelength generated in the active layer into a light of a second wavelength; and a non-conductive reflective film formed on the second semiconductor layer for reflecting the light from the active layer towards the first semiconductor layer on the side of the growth substrate, with the non-conductive reflective film having a distributed bragg reflector designed based on the light converted by the phosphor part.

Semiconductor light emitting device comprising finger electrodes

The present disclosure relates to a semiconductor light emitting device and a method for manufacturing the same, in which the semiconductor light emitting device includes a semiconductor light emitting chip having a semiconductor light emitting part for generating light by electron-hole recombination, and at least one electrode electrically connected to the semiconductor light emitting part; a wall placed on a lateral side of the semiconductor light emitting part, with the wall having an elevated upper end caused by surface tension effects; and an encapsulant arranged in a bowl that is defined by the upper end of the wall and the semiconductor light emitting part, with the encapsulant for transmitting therethrough a light from the semiconductor light emitting part.

Semiconductor light emitting device and method for manufacturing same

Disclosed is a semiconductor light emitting device, including: a plurality of semiconductor layers; a non-conductive reflective film coupled to the plurality of the semiconductor layers; and one or more electrodes formed on the non-conductive reflective film and electrically connected to the plurality of semiconductor layers, in which the one or more electrodes respectively include a lower electrode layer for reflecting light generated in the active layer and then passed the non-conductive reflective film, and an upper electrode layer arranged on the lower electrode layer for preventing a foreign material from penetrating into the lower electrode layer.

Semiconductor light emitting device

Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a first non-conductive reflective film formed on the plurality of semiconductor layer to reflect light from the active layer, wherein the first non-conductive reflective film includes multiple layers and has a first incident angle as the Brewster angle; a second non-conductive reflective film formed on the first non-conductive reflective film to reflect light transmitted through the first non-conductive reflective film, wherein the second non-conductive reflective film includes multiple layers, with part of which being made of a different material from the first non-conductive reflective film, and has a second incident angle as the Brewster angle, different from the first incident angle; and an electrode electrically connected to one of the plurality of semiconductor layers.

Disclosed is a semiconductor light emitting device including: multiple semiconductor layers including a first semiconductor layer, a second semiconductor layer, and an active layer; an electrode electrically connected with the multiple semiconductor layers; a light absorption barrier disposed about at least the electrode; and a non-conductive reflective film adapted to cover the multiple semiconductor layers, the light absorption barrier and the electrode and to reflect light from the active layer, wherein the non-conductive reflective film has an abnormal region of a lower reflectivity around the electrode due to a height difference between the light absorption barrier and the electrode, wherein a portion of the non-conductive reflective film exposed from the electrode is made longer than the abnormal region as seen in a cross-sectional view of the electrode.

Semiconductor light emitting device of a flip chip and method for manufacturing same

Disclosed is a semiconductor light emitting device, including: a body, which has a bottom part with at least one hole formed therein, a side wall, and a cavity defined by the bottom part and the side wall; a semiconductor light emitting chip, which is placed in each hole and includes plural semiconductor layers adapted to generate light by electron-hole recombination and electrodes electrically connected to the plural semiconductor layers; and an encapsulating member provided at least to the cavity to cover the semiconductor light emitting chip, in which the electrodes of the semiconductor light emitting chip are exposed towards the lower face of the bottom part of the body.

Growing community of inventors

Gyeonggi-do, South Korea

Soo Kun Jeon