Samsung Electronics Co., Ltd.

Soo-jin Lee

Kyoung-mi Kim

Jae-ho Kim

Jung-sik Choi

Jeong-ju Park

Hyoung-hee Kim

Se-kyung Baek

A method of forming a fine pattern includes forming a phase separation guide layer on a substrate, forming a neutral layer on the phase separation guide layer, forming a first pattern including first openings on the neutral layer, forming a second pattern including second openings each having a smaller width than each of the first openings, forming a neutral pattern including guide patterns exposing a portion of the phase separation guide layer by etching an exposed portion of the neutral layer by using the second pattern as an etch mask, removing the second pattern to expose a top surface of the neutral pattern, forming a material layer including a block copolymer on the neutral pattern and the phase separation guide layer exposed through the guide patterns, and forming a fine pattern layer including a first block and a second block on the neutral pattern and the phase separation guide layer.

Growing community of inventors

Anyang-si, South Korea

Soo-jin Lee