Skhynix Inc.

Hynix Semiconductor Inc.

Samsung Electronics Co., Ltd.

Soulbrain Co., Ltd.

Chong Kun Dang Pharmaceutical Corporation

Lg Electronics Inc.

Lg Chem, Ltd

Samsung Sdi Co., Inc.

National Cancer Center

Sk Communications Corp.

Soo Jin Kim

Fan Zhang

Naveen Kumar

Aman Bhatia

Yu Cai

Chenrong Xiong

Yi-Min Lin

Jung Hun Lim

Kyoung Lae Cho

Hyo Sun Lee

Abhiram Prabahkar

Yong Jae Choi

Jin Hye Bae

Ki Hong Lee

Seung Ho Pyi

Jin Ho Bin

Jae Hyun Kim

Woochan Kim

Soon Ho Ahn

Seung Jin Park

Won Kyung Kang

Woo Cheol Shin

Jongpil Lee

Inhak Choi

Hyun Jung Kwon

Ui Chung Chung

Yong Il Lee

Myung Heui Woo

Si Young Cha

Ha Rim Lee

Young Sang Kim

Kun Yong Park

Jung Wook Seo

In Chull Kim

Sung Hyuk Jung

Sung Wha Shim

Jun Seop Jeong

Jin Suk Lee

Jae Hong Ahn

Don Hi Won

Youn Kyung Go

Jonathan Kim

Chol Hong Im

Chester An

Hyuck Jin Im

Jung-Yong Kim

Young-Whan Park

MinChae Kim

Suna Im

U Ji Kim

A computational storage device comprises a shared memory directly accessible by a host, a computational storage processor, a storage media configured to store base data, and a storage processor. The computational storage processor reads request information written to the shared memory by the host, and responds to the host with result data for the request information. The computational storage processor reads base data stored in a storage media, extracts result data from the base data, writes the result data to the shared memory, and transmits, to the host, a notification indicating that the result data has been written to the shared memory.

Computational storage device communicating with host using shared memory and operating method thereof

A data processing system includes a storage medium, and a controller including a data processing block, configured to receive data from a host, transmit the received data to the storage medium, read data from the storage medium in response to a read request from the host, and decode the read data by the data processing block according to multiple decoding modes. The data processing block includes a first decoder and a second decoder, and is configured to manage the first decoder and the second decoder to run the decoding for the read data, and activate a fast decoding having shorter latency than a normal decoding after a fast decoding condition is satisfied.

Data storage device

Provided is a method performed by a user equipment (UE) in a wireless communication system. The method includes performing communication with a base station based on a full-duplex mode, transmitting, to the base station, a first message for requesting a duration for calibration of a circuit for analog self-interference cancellation (SIC), receiving, from the base station, a second message for allocating the duration, and performing the calibration of the circuit during the duration. Herein, during the duration, the UE is controlled to operate based on a half-duplex mode.

Apparatus and method for performing calibration in wireless communication system

A storage device can control the input/output of data at a high frequency. The storage device includes a memory device and a memory controller for controlling the memory device, and providing the memory device with a command. The memory device includes a memory unit, and an interface chip for performing a training operation in response to the command. The interface chip generates a shift signal according to a first data strobe signal provided from the memory controller, and stores, based on the shift signal, training data provided from the memory controller.

Storage device and operating method thereof

Provided are an organic electrolytic solution and a lithium battery including the organic electrolytic solution, wherein the organic electrolytic solution includes an organic solvent, a lithium salt, a borate compound represented by Formula 1 below, and an ionic metal complex represented by Formula 2 below: wherein R, R, and Rare each independently a hydrogen; a C-Calkyl group substituted or unsubstituted with a halogen; or a C-Ccyanoalkyl group substituted or unsubstituted with a halogen, at least one of the R, R, and Rincludes a cyanoalkyl group, Me is an element selected from the group consisting of transition metals and Groups 13 to 15 elements of the periodic table, M is a metal ion, a is an integer from 1 to 3, b is an integer from 1 to 3, s=b/a, p is an integer from 0 to 8, q is 0 or 1, r is an integer from 1 to 4, Xand Xare each independently O, S, or NR, Rand Rare each independently a halogen, a C-Calkyl group substituted or unsubstituted with a halogen, or a C-Caryl group substituted or unsubstituted with a halogen, and Ris a C-Calkylene group substituted or unsubstituted with a halogen or a C-Carylene group substituted or unsubstituted with a halogen.

Organic electrolyte and lithium battery employing said electrolyte

An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).

Etching composition and method for fabricating semiconductor device by using the same

The present disclosure provides a composition for preventing or treating cancer comprising (S)&#x2014;N-(4-(3-(1H-1,2,4-triazole-1-yl)-4-(3,4,5-trimethoxy-benzoyl)phenyl)thiazole-2-yl)-2-amino-3-methylbutanamide or pharmaceutically acceptable salts thereof, and an immune checkpoint inhibitor. The composition of the present disclosure achieves an excellent cancer treatment effect.

Composition for preventing or treating cancer comprising a vascular disrupting agent and immune checkpoint inhibitor

An error correction code (ECC) encoder includes a plurality of exclusive OR (XOR) gates configured to receive a 'k'-bit original data in parallel and configured to perform a plurality of XOR operations to the 'k'-bit original data to output a &#x201c;(n&#x2212;k)&#x201d;-bit parity data. The &#x201c;k&#x201d;-bit original data and the &#x201c;(n&#x2212;k)&#x201d;-bit parity data form an &#x201c;n&#x201d;-bit codeword, &#x201c;k&#x201d; denotes a natural number and &#x201c;n&#x201d; denotes a natural number which is greater than &#x201c;k&#x201d;.

Error correction code (ECC) encoders, ECC encoding methods capable of encoding for one clock cycle, and memory controllers including the ECC encoders

An error correction circuit includes a syndrome calculator suitable for generating syndromes from an 'n'-bit codeword for a single unit of time, an error location polynomial calculator suitable for generating error location polynomial coefficients based on the syndromes provided for the single unit of time, an error location calculator suitable for calculating error locations based on the error location polynomial coefficients for the single unit of time, and an error corrector suitable for correcting errors of the codeword based on the error locations for the single unit of time. The error correction circuit operates in a pipelining manner.

Error correction circuits and memory controllers including the same

The present invention relates to a pharmaceutical combined composition for preventing or treating cancer comprising a compound of formula 1 or a pharmaceutically acceptable salt thereof and topoisomerase inhibitor as active ingredients. The pharmaceutical combined composition of the present invention specifically inhibits cell proliferation and induces apoptosis as to various cancers such as colorectal cancer and ovarian cancer that a vascular disrupting agent cannot treat due to a complex inhibition mechanism of neoplasm of the compound of formula 1 and the pharmaceutically acceptable salt thereof and topoisomerase inhibitor, and thereby it can be usefully used for preventing and treating cancer.

Combined composition for preventing or treating cancer comprising a benzophenone thiazole derivatives as a VDA and topoisomerase inhibitor

A semiconductor device including a central region, side regions located in both sides of the central region, and conductive layers including a first barrier pattern formed in the central region, a material pattern formed in the first barrier pattern and having an etch selectivity with respect to the first barrier pattern, and a second barrier pattern formed in the material pattern; and insulating layers alternately stacked with the conductive layers.

Transistor, semiconductor device and method of manufacturing the same

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Seoul, South Korea

Soo Jin Kim